APT12045L2VFR Specs and Replacement
Type Designator: APT12045L2VFR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 833 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ -
Output Capacitance: 950 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO264MAX
APT12045L2VFR substitution
- MOSFET ⓘ Cross-Reference Search
APT12045L2VFR datasheet
..1. Size:125K apt
apt12045l2vfr.pdf 
APT12045L2VFR 1200V 28A 0.450 POWER MOS V TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching Avalan... See More ⇒
0.1. Size:126K apt
apt12045l2vfrg.pdf 
APT12045L2VFR 1200V 28A 0.450 POWER MOS V TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching Avalan... See More ⇒
7.1. Size:101K apt
apt12040l2fllg.pdf 
APT12040L2FLL 1200V 30A 0.400 R POWER MOS 7 FREDFET TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally ... See More ⇒
7.2. Size:245K apt
apt1204r7bfllg apt1204r7sfllg.pdf 
APT1204R7BFLL APT1204R7SFLL 1200V 3.5A 4.700 R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along ... See More ⇒
7.3. Size:207K apt
apt12040jvr.pdf 
APT12040JVR 1200V 26A 0.400W POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche T... See More ⇒
7.4. Size:69K apt
apt12040jll.pdf 
APT12040JLL 1000V 24A 0.400W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's ... See More ⇒
7.5. Size:108K apt
apt12040jfll.pdf 
APT12040JFLL 1200V 24A 0.400 R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses "UL Recognized" ISOTOP along with e... See More ⇒
7.6. Size:242K apt
apt1204r7kfllg.pdf 
APT1204R7KFLL 1200V 3.5A 4.700 R POWER MOS 7 FREDFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses G D S along with exceptio... See More ⇒
7.7. Size:64K apt
apt12040l2ll.pdf 
APT12040L2LL 1200V 30A 0.400W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent... See More ⇒
7.8. Size:121K apt
apt12040jvfr.pdf 
APT12040JVFR 1200V 26A 0.400 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP Faste... See More ⇒
Detailed specifications: APT1201R4SLL, APT1201R5BVFR, APT1201R5SVFR, APT1201R6BVFR, APT12031JLL, APT12040JLL, APT12040JVFR, APT12040L2LL, 2N7000, APT12045L2VR, APT12057B2LL, APT12057JLL, APT12060B2VFR, APT12060B2VR, APT12067B2LL, APT12067JLL, APT12080B2VFR
Keywords - APT12045L2VFR MOSFET specs
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