All MOSFET. APT12080JVFR Datasheet

 

APT12080JVFR MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT12080JVFR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 325 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 530 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: SOT227

 APT12080JVFR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT12080JVFR Datasheet (PDF)

 ..1. Size:112K  apt
 apt12080jvfr.pdf

APT12080JVFR APT12080JVFR

APT12080JVFR1200V 15A 0.800POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"ISOTOPalso achieves faster switching speeds through optimized gate layout.D Faster Swit

 4.1. Size:203K  apt
 apt12080jvr.pdf

APT12080JVFR APT12080JVFR

APT12080JVR1200V 15A 0.800WPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T

 6.1. Size:111K  apt
 apt12080b2vfr.pdf

APT12080JVFR APT12080JVFR

APT12080B2VFRAPT12080LVFR1200V 16A 0.800POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementT-MAXTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 6.2. Size:61K  apt
 apt12080lvr.pdf

APT12080JVFR APT12080JVFR

APT12080LVR1200V 16A 0.800POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

 6.3. Size:118K  apt
 apt12080b2vfrg apt12080lvfrg.pdf

APT12080JVFR APT12080JVFR

APT12080B2VFRAPT12080LVFR1200V 16A 0.800POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementT-MAXTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BL6N40-A | BTS140A

 

 
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