APT20M18B2VR PDF and Equivalents Search

 ..1. Size:38K  apt
 apt20m18b2vr.pdf

APT20M18B2VR APT20M18LVR 200V 100A 0.018W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificati... See More ⇒

 ..2. Size:376K  inchange semiconductor
 apt20m18b2vr.pdf

isc N-Channel MOSFET Transistor APT20M18B2VR FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.018 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

 0.1. Size:159K  apt
 apt20m18b2vrg apt20m18lvrg.pdf

APT20M18B2VR A20M18LVR 200V 100A 0.018 B2VR POWER MOS V MOSFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LV... See More ⇒

 3.1. Size:152K  apt
 apt20m18b2vfrg apt20m18lvfrg.pdf

APT20M18B2VFR A20M18LVFR 200V 100A 0.018 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.... See More ⇒

 3.2. Size:39K  apt
 apt20m18b2vfr.pdf

APT20M18B2VFR APT20M18LVFR 200V 100A 0.018W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical... See More ⇒

 3.3. Size:375K  inchange semiconductor
 apt20m18b2vfr.pdf

isc N-Channel MOSFET Transistor APT20M18B2VFR FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.018 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒