All MOSFET. APT30M17JLL Datasheet

 

APT30M17JLL MOSFET. Datasheet pdf. Equivalent

Type Designator: APT30M17JLL

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 690 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 135 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 31 nS

Drain-Source Capacitance (Cd): 3400 pF

Maximum Drain-Source On-State Resistance (Rds): 0.017 Ohm

Package: SOT227

APT30M17JLL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT30M17JLL Datasheet (PDF)

1.1. apt30m17jfll.pdf Size:167K _update_mosfet

APT30M17JLL
APT30M17JLL

APT30M17JFLL Ω 300V 135A 0.017Ω Ω Ω Ω R POWER MOS 7 FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses "UL Recognized" along with exceptiona

1.2. apt30m17jll.pdf Size:69K _apt

APT30M17JLL
APT30M17JLL

APT30M17JLL 300V 135A 0.017W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

 3.1. apt30m19jvr.pdf Size:74K _apt

APT30M17JLL
APT30M17JLL

APT30M19JVR 300V 130A 0.019Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche

3.2. apt30m19jvfr.pdf Size:76K _apt

APT30M17JLL
APT30M17JLL

APT30M19JVFR 300V 130A 0.019Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. ISOTOP® • Fast Recovery Body Diode • 100% Avalanche

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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