APT30M17JLL MOSFET Datasheet: N-Ch, 300V, 135A. Full specification with pinout and replacement list

APT30M17JLL Specs and Replacement

Type Designator: APT30M17JLL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 690 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 135 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 3400 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: SOT227

APT30M17JLL substitution

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APT30M17JLL datasheet

..1. Size:69K apt
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APT30M17JLL 300V 135A 0.017W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's ... See More ⇒

5.1. Size:167K apt
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APT30M17JFLL 300V 135A 0.017 R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses "UL Recognized" along with exceptiona... See More ⇒

7.1. Size:76K apt
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APT30M19JVFR 300V 130A 0.019 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. ISOTOP Fast Recovery Body Diode 100% Avalanche... See More ⇒

7.2. Size:74K apt
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APT30M19JVR 300V 130A 0.019 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche... See More ⇒

Detailed specifications: APT20M20JFLL , APT20M20JLL , APT20M34BFLL , APT20M34BLL , APT20M36BFLL , APT20M36BLL , 2SK310 , APT20N60BC3 , CS150N03A8 , APT30M30B2LL , APT30M30JLL , APT30M36B2LL , APT30M36JLL , APT30M40B2VR , APT30M61BLL , APT30M75BLL , APT31N80JC3 .