APT34N80B2C3 MOSFET. Datasheet pdf. Equivalent
Type Designator: APT34N80B2C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 417 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 34 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 2050 pF
Maximum Drain-Source On-State Resistance (Rds): 0.145 Ohm
Package: TMAX
APT34N80B2C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT34N80B2C3 Datasheet (PDF)
1.1. apt34n80b2c3.pdf 
Size:173K _apt
APT34N80B2C3 APT34N80LC3 Ω 800V 34A 0.145Ω Ω Ω Ω Super Junction MOSFET T-MAX™ TO-264 COOLMOS Power Semiconductors • Ultra low RDS(ON) D • Low Miller Capacitance • Ultra Low Gate Charge, Qg G • Avalanche Energy Rated S • Popular T-MAX™ or TO-264 Package MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT34N80B2C3_
Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .
