All MOSFET. APT34N80B2C3 Datasheet

 

APT34N80B2C3 MOSFET. Datasheet pdf. Equivalent

Type Designator: APT34N80B2C3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 417 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 34 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 2050 pF

Maximum Drain-Source On-State Resistance (Rds): 0.145 Ohm

Package: TMAX

APT34N80B2C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT34N80B2C3 Datasheet (PDF)

1.1. apt34n80b2c3g apt34n80lc3g.pdf Size:256K _update_mosfet

APT34N80B2C3
APT34N80B2C3

APT34N80B2C3 APT34N80LC3 Ω 800V 34A 0.145Ω Ω Ω Ω Super Junction MOSFET T-MAX™ TO-264 COOLMOS Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance D • Ultra Low Gate Charge, Qg • Avalanche Energy Rated G • Popular T-MAX™ or TO-264 Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made

1.2. apt34n80b2c3.pdf Size:173K _apt

APT34N80B2C3
APT34N80B2C3

APT34N80B2C3 APT34N80LC3 Ω 800V 34A 0.145Ω Ω Ω Ω Super Junction MOSFET T-MAX™ TO-264 COOLMOS Power Semiconductors • Ultra low RDS(ON) D • Low Miller Capacitance • Ultra Low Gate Charge, Qg G • Avalanche Energy Rated S • Popular T-MAX™ or TO-264 Package MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT34N80B2C3_

 5.1. apt34m60b apt34m60s.pdf Size:212K _update_mosfet

APT34N80B2C3
APT34N80B2C3

 APT34M60B APT34M60S 600V, 36A, 0.19Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of

5.2. apt34f60b apt34f60bg apt34f60s.pdf Size:213K _update_mosfet

APT34N80B2C3
APT34N80B2C3

 APT34F60B APT34F60S 600V, 36A, 0.19Ω Max trr ≤250ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power D3PAK MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low

 5.3. apt34f100b2 apt34f100l.pdf Size:179K _update_mosfet

APT34N80B2C3
APT34N80B2C3

 APT34F100B2 APT34F100L 1000V, 35A, .38Ω Max trr ≤300ns N-Channel FREDFET T-Max® TO-264 Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt ca

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
Back to Top