All MOSFET. APT50M50JFLL Datasheet

 

APT50M50JFLL MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT50M50JFLL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 595 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 71 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 246 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 2030 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT227

 APT50M50JFLL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT50M50JFLL Datasheet (PDF)

 ..1. Size:71K  apt
 apt50m50jfll.pdf

APT50M50JFLL APT50M50JFLL

APT50M50JFLL500V 71A 0.050WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wit

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 apt50m50jvfr.pdf

APT50M50JFLL APT50M50JFLL

APT50M50JVFR500V 77A 0.050POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

 5.2. Size:77K  apt
 apt50m50jll.pdf

APT50M50JFLL APT50M50JFLL

APT50M50JLL500V 71A 0.050R POWER MOS 7 MOSFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses"UL Recognized"along with exceptionally

 5.3. Size:71K  apt
 apt50m50jvr.pdf

APT50M50JFLL APT50M50JFLL

APT50M50JVR500V 77A 0.050POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 5.4. Size:34K  apt
 apt50m50jlc.pdf

APT50M50JFLL APT50M50JFLL

APT50M50JLC500V 77A 0.050 WTMPOWER MOS VIPower MOS VITM is a new generation of low gate charge, high voltageN-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,"UL Recognized"delivers exceptionally fast switching speeds.ISOT

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