APT50M50L2FLL
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT50M50L2FLL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 890
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 89
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 246
nC
trⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 2030
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05
Ohm
Package:
TO264
APT50M50L2FLL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT50M50L2FLL
Datasheet (PDF)
..1. Size:65K apt
apt50m50l2fll.pdf
APT50M50L2FLL500V 89A 0.050WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds
0.1. Size:95K apt
apt50m50l2fllg.pdf
APT50M50L2FLL500V 89A 0.050R POWER MOS 7 FREDFETTO-264Power MOS 7 is a new generation of low loss, high voltage, N-ChannelMaxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally
4.1. Size:95K apt
apt50m50l2llg.pdf
APT50M50L2LL500V 89A 0.050R POWER MOS 7 MOSFETTO-264Power MOS 7 is a new generation of low loss, high voltage, N-ChannelMaxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fa
4.2. Size:63K apt
apt50m50l2ll.pdf
APT50M50L2LL500V 87A 0.050WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent
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