APT50M65JFLL PDF and Equivalents Search

 ..1. Size:63K  apt
 apt50m65jfll.pdf

APT50M65JFLL 500V 60A 0.065W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit... See More ⇒

 5.1. Size:60K  apt
 apt50m65jll.pdf

APT50M65JLL 500V 60A 0.065 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's ... See More ⇒

 6.1. Size:99K  apt
 apt50m65lfll.pdf

APT50M65B2FLL APT50M65LFLL 500V 67A 0.065 R B2FLL POWER MOS 7 FREDFET T-MaxTM Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses L... See More ⇒

 6.2. Size:98K  apt
 apt50m65b2llg apt50m65lllg.pdf

APT50M65B2LL APT50M65LLL 500V 67A 0.065 R B2LL POWER MOS 7 MOSFET T-MaxTM Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL ... See More ⇒

 6.3. Size:63K  apt
 apt50m65.pdf

APT50M65B2FLL APT50M65LFLL 500V 67A 0.065W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptio... See More ⇒

 6.4. Size:63K  apt
 apt50m65b2fll.pdf

APT50M65B2FLL APT50M65LFLL 500V 67A 0.065W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptio... See More ⇒

 6.5. Size:68K  apt
 apt50m65b2ll.pdf

APT50M65B2LL APT50M65LLL 500V 67A 0.065W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast s... See More ⇒

 6.6. Size:255K  inchange semiconductor
 apt50m65lfll.pdf

isc N-Channel MOSFET Transistor APT50M65LFLL FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.065 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p... See More ⇒

 6.7. Size:376K  inchange semiconductor
 apt50m65b2fll.pdf

isc N-Channel MOSFET Transistor APT50M65B2FLL FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.065 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

 6.8. Size:376K  inchange semiconductor
 apt50m65b2ll.pdf

isc N-Channel MOSFET Transistor APT50M65B2LL FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.065 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p... See More ⇒