APT50M85B2VR Specs and Replacement

Type Designator: APT50M85B2VR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 1160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: TMAX

APT50M85B2VR substitution

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APT50M85B2VR datasheet

 ..1. Size:36K  apt
apt50m85b2vr.pdf pdf_icon

APT50M85B2VR

APT50M85B2VR APT50M85LVR 500V 56A 0.085W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificatio... See More ⇒

 3.1. Size:39K  apt
apt50m85b2vfr.pdf pdf_icon

APT50M85B2VR

APT50M85B2VFR APT50M85LVFR 500V 56A 0.085W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical ... See More ⇒

 3.2. Size:137K  apt
apt50m85b2vfrg apt50m85lvfrg.pdf pdf_icon

APT50M85B2VR

APT50M85B2VFR APT50M85LVFR 500V 56A 0.085 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout... See More ⇒

 6.1. Size:74K  apt
apt50m85jvr.pdf pdf_icon

APT50M85B2VR

APT50M85JVR 500V 50A 0.085 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche ... See More ⇒

Detailed specifications: APT50M75JFLL, APT50M75JLL, APT50M75JLLU2, APT50M80B2LC, APT50M80B2VFR, APT50M80B2VR, APT50M80JLC, APT50M85B2VFR, IRF840, APT5560AN, APT6010B2LL, APT6010JFLL, APT6010JLL, APT6011B2VFR, APT6011B2VR, APT6011LVFR, APT6011LVR

Keywords - APT50M85B2VR MOSFET specs

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