APT6010JLL MOSFET. Datasheet pdf. Equivalent
Type Designator: APT6010JLL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 520 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 47 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 1210 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT227
APT6010JLL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT6010JLL Datasheet (PDF)
apt6010jll.pdf
APT6010JLL600V 47A 0.100WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's"U
apt6010jfll.pdf
APT6010JFLL600V 47A 0.100WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with
apt6010b2ll.pdf
APT6010B2LLAPT6010LLL600V 54A 0.100WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast swi
apt6010b2fllg apt6010lfllg.pdf
600V 54A 0.100APT6010B2FLL APT6010LFLLAPT6010B2FLL* APT6010LFLLG**G Denotes RoHS Compliant, Pb Free Terminal Finish.R B2FLL POWER MOS 7 FREDFETT-MAXTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering
apt6010b2llg apt6010lllg.pdf
600V 54A 0.100APT6010B2LL APT6010LLLAPT6010B2LL* APT6010LLLG**G Denotes RoHS Compliant, Pb Free Terminal Finish.RB2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(O
apt6010b2fll.pdf
isc N-Channel MOSFET Transistor APT6010B2FLLFEATURESDrain Current I = 54A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
apt6010lfll.pdf
isc N-Channel MOSFET Transistor APT6010LFLLFEATURESDrain Current I = 54A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
apt6010b2ll.pdf
isc N-Channel MOSFET Transistor APT6010B2LLFEATURESDrain Current I = 54A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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