APT6030SVR Specs and Replacement

Type Designator: APT6030SVR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 298 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: D3PAK

APT6030SVR substitution

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APT6030SVR datasheet

 ..1. Size:112K  apt
apt6030svr.pdf pdf_icon

APT6030SVR

APT6030BVR APT6030SVR 600V 21A 0.300 BVR POWER MOS V MOSFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVR ... See More ⇒

 5.1. Size:136K  apt
apt6030svfr.pdf pdf_icon

APT6030SVR

APT6030BVFR APT6030SVFR 600V 21A 0.300 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVFR... See More ⇒

 7.1. Size:61K  apt
apt6030bvr.pdf pdf_icon

APT6030SVR

APT6030BVR 600V 21A 0.300 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L... See More ⇒

 7.2. Size:62K  apt
apt6030bvfr.pdf pdf_icon

APT6030SVR

APT6030BVFR 600V 21A 0.300W POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tested... See More ⇒

Detailed specifications: APT6025BLL, APT6025BVFR, APT6025SVFR, APT6025SVR, APT6029BFLL, APT6029BLL, APT6030BVFR, APT6030SVFR, 2N7002, APT6035BVFR, APT6038BFLL, APT6038BLL, APT6040BVFR, APT6040BVR, APT6060BNR, APT60M60JFLL, APT60M60JLL

Keywords - APT6030SVR MOSFET specs

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