HUF75329S3ST Datasheet and Replacement. Cross Reference Search

HUF75329S3ST Datasheet (PDF)

3.1. Size:252K fairchild semi
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HUF75329G3, HUF75329P3, HUF75329S3SData Sheet December 200149A, 55V, 0.024 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 49A, 55VThese N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Available on t

6.1. Size:660K fairchild semi
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HUF75329D3SData Sheet October 2013N-Channel UltraFET Power MOSFET Features55 V, 20 A, 26 m 20A, 55VThese N-Channel power MOSFETs are manufactured using Simulation Modelsthe innovative UltraFET process. This advanced process - Temperature Compensated PSPICE and SABER technology achieves the lowest possible on-resistance per Modelssilicon area, resulting in ou

6.2. Size:225K fairchild semi
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HUF75329D3, HUF75329D3SData Sheet December 200120A, 55V, 0.026 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models achieves the

6.3. Size:715K onsemi
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HUF75329D3SData Sheet October 2013N-Channel UltraFET Power MOSFETFeatures55 V, 20 A, 26 m 20A, 55VThese N-Channel power MOSFETs are manufactured Simulation Modelsusing the innovative UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the lowest possible on-Modelsresistance per silicon area, resulting in o

Datasheet: HUF75321S3S , HUF75321S3ST , HUF75329D3 , HUF75329D3S , HUF75329G3 , HUF75329P3 , HUF75329S3 , HUF75329S3S , IRFB3607 , HUF75332G3 , HUF75332P3 , HUF75332S3S , HUF75333G3 , HUF75333P3 , HUF75333S3 , HUF75333S3S , HUF75333S3ST .