All MOSFET. APT8020JFLL Datasheet

 

APT8020JFLL MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT8020JFLL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 196 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 1020 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: SOT227

 APT8020JFLL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT8020JFLL Datasheet (PDF)

 ..1. Size:70K  apt
apt8020jfll.pdf

APT8020JFLL
APT8020JFLL

APT8020JFLL800V 33A 0.200WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with

 6.1. Size:69K  apt
apt8020jll.pdf

APT8020JFLL
APT8020JFLL

APT8020JLL800V 33A 0.200WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's"U

 7.1. Size:69K  apt
apt8020b2ll.pdf

APT8020JFLL
APT8020JFLL

APT8020B2LLAPT8020LLL800V 38A 0.200WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast swi

 7.2. Size:71K  apt
apt8020b2fll.pdf

APT8020JFLL
APT8020JFLL

APT8020B2FLLAPT8020LFLL800V 38A 0.200WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptiona

 7.3. Size:157K  apt
apt8020b2llg apt8020lllg.pdf

APT8020JFLL
APT8020JFLL

APT8020B2LLAPT8020LLL800V 38A 0.200B2LLR POWER MOS 7 MOSFETT-MAXTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)LLLand Qg. Power MOS 7 combines lower conduction and switching losses

 7.4. Size:251K  microsemi
apt8020b2fllg apt8020lfllg.pdf

APT8020JFLL
APT8020JFLL

APT8020B2FLLAPT8020LFLL800V 38A 0.220RB2FLL POWER MOS 7 FREDFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)LFLLand Qg. Power MOS 7 combines lower conduction and switching los

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History: FQPF3N80C

 

 
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