HUF75332G3 Datasheet and Replacement
Type Designator: HUF75332G3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 145 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TO247
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HUF75332G3 Datasheet (PDF)
huf75332s3st.pdf

HUF75332G3, HUF75332P3, HUF75332S3SData Sheet January 200560A, 55V, 0.019 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 60A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models a
huf75332p3.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
huf75332.pdf

HUF75332G3, HUF75332P3, HUF75332S3SData Sheet June 1999 File Number 4489.360A, 55V, 0.019 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 60A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the- Temperature Compensated PSPICE and SABERinnovative UltraFET process.ModelsThis advanced process technology- SPICE and SABER Thermal Impedance
Datasheet: HUF75321S3ST , HUF75329D3 , HUF75329D3S , HUF75329G3 , HUF75329P3 , HUF75329S3 , HUF75329S3S , HUF75329S3ST , 4435 , HUF75332P3 , HUF75332S3S , HUF75333G3 , HUF75333P3 , HUF75333S3 , HUF75333S3S , HUF75333S3ST , HUF75337G3 .
Keywords - HUF75332G3 MOSFET datasheet
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History: TK2P60D | IRFBG20



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