All MOSFET. APT8024JFLL Datasheet

 

APT8024JFLL Datasheet and Replacement


   Type Designator: APT8024JFLL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 460 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 29 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 163 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: SOT227
 

 APT8024JFLL substitution

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APT8024JFLL Datasheet (PDF)

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APT8024JFLL

APT8024JFLL800V 29A 0.240WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with

 6.1. Size:69K  apt
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APT8024JFLL

APT8024JLL800V 29A 0.240WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's"U

 7.1. Size:70K  apt
apt8024b2fll.pdf pdf_icon

APT8024JFLL

APT8024B2FLLAPT8024LFLL800V 31A 0.240WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptiona

 7.2. Size:39K  apt
apt8024b2vfr.pdf pdf_icon

APT8024JFLL

APT8024B2VFRAPT8024LVFR800V 33A 0.240WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical Sp

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History: TK62J60W

Keywords - APT8024JFLL MOSFET datasheet

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