STU20N15 MOSFET. Datasheet pdf. Equivalent

GrerrPPrPrProSTU/D20N15aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.58 @ VGS=10VTO-252 and TO-251 Package.150V 20A65 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK

GreenProductS TU/D2030P LSS amHop Microelectronics C orp.Aug 20 2005P-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATUR ESR DS (ON) ( m ) MaxVDS S ID S uper high dense cell design for low R DS (ON).R ugged and reliable.32 @ VGS =-10V-30V -20ATO-252 and TO-251 Package.55 @ VGS = -4.5VDDDGGGSSSTU SERIES STU SERIESTO-252AA

GrPPrPPSTU/D20L01AaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.49 @ VGS=10VTO-252 and TO-251 Package.100V 20A56 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO -

GreenProductSTU/D20L01aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.54 @ VGS=10VTO-252 and TO-251 Package.20A100V63 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO -