STM6962 MOSFET Datasheet: N-Ch, 60V, 6.5A. Full specification with pinout and replacement list

STM6962 Specs and Replacement

Type Designator: STM6962

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: SO-8

STM6962 substitution

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STM6962 datasheet

..1. Size:137K samhop
stm6962.pdf pdf_icon

Green Product STM6962 SamHop Microelectronics Corp. Aug 29.2006 Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY FEATURES Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( m ) Max Rugged and reliable. 36 @ VGS = 10V 60V 6.5A Surface Mount Package. 42 @ VGS = 4.5V D1 D1 D2 D2 8 7 6 5 SO-8 1 1 2 3 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ... See More ⇒

8.1. Size:169K samhop
stm6967.pdf pdf_icon

Green Product STM6967 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 86 @ VGS=-10V Suface Mount Package. -60V -4A 125 @ VGS=-4.5V D 5 4 G 6 3 D S 7 2 D S S O-8 D 8 1 S 1 (TA=25 C unless otherwise noted) ABS... See More ⇒

8.2. Size:91K samhop
stm6968.pdf pdf_icon

S TM6968 S amHop Microelectronics C orp. Nov 12.2006 Dual N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y FEATUR ES S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 60 @ VGS = 10V 60V 5A Surface Mount Package. 70 @ VGS =4.5V ESD Protected. D1 D1 D2 D2 8 7 6 5 SO-8 1 1 2 3 4 S 1 G 1 S 2 G 2 ABS OLUTE... See More ⇒

8.3. Size:100K samhop
stm6960a.pdf pdf_icon

Green r r P Pr Pr Prod STM6960A a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 71 @ VGS=10V Suface Mount Package. 60V 4A 92 @ VGS=4.5V 5 4 G 2 D2 6 3 D2 S 2 7 2 D1 G 1 SO-8 D1 8 1 S 1 1 (TA=25 C un... See More ⇒