STC2201
MOSFET. Datasheet pdf. Equivalent
Type Designator: STC2201
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 2.9
nC
trⓘ - Rise Time: 15.4
nS
Cossⓘ -
Output Capacitance: 55
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.145
Ohm
Package:
SOT323
STC2201
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STC2201
Datasheet (PDF)
..1. Size:90K samhop
stc2201.pdf
S TC 2201S amHop Microelectronics C orp.Mar 15 2005 ver1.2P-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATUR ESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.145 @ VGS = -4.5V-20V -2AS OT-323 package.195 @ VGS = -2.5VDSOT-323GSAB S OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise not
8.1. Size:131K samhop
stc2200.pdf
GreenProductS TC 2200S amHop Microelectronics C orp.Mar 15 2005 ver1.2N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.85 @ VG S = 4.5V20V 2.3AS OT-323 package.110 @ VG S = 2.5VDS OT-323GSAB S OLUTE MAXIMUM R ATING (TA=25 C u
9.1. Size:388K auk
stc221f.pdf
STC221FNPN Silicon TransistorPIN Connection Descriptions General purpose amplifier High current application Features High hFE : hFE=160~320 Low collector saturation voltage : VCE(sat)=0.5V(MAX.) SOT-89 Ordering Information Type No. Marking Package Code C221 STC221F SOT-89 YWW C221: DEVICE CODE, YWW(Y : Year code, WW : Weekly code) Absolute ma
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