SP8009E MOSFET Datasheet: N-Ch, 33V, 24A. Full specification with pinout and replacement list

SP8009E Specs and Replacement

Type Designator: SP8009E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.67 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 33 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 362 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TSON3.3X3.3

SP8009E substitution

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SP8009E datasheet

..1. Size:114K samhop
sp8009e.pdf pdf_icon

Green Product SP8009E a S mHop Microelectronics C orp. Ver 1.5 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 5.0 @ VGS=10V Suface Mount Package. 33V 24A 6.5 @ VGS=6V ESD Protected. D 5 4 G D 6 3 S 7 2 D S Pin 1 8 1 D S TSON 3.3 x 3.3 ABSOLUTE MAXI... See More ⇒

0.1. Size:113K samhop
sp8009el.pdf pdf_icon

Green Product SP8009EL a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 5.0 @ VGS=10V Suface Mount Package. 33V 24A 6.5 @ VGS=6V ESD Protected. D 5 4 G D 6 3 S 7 2 D S Pin 1 8 1 D S TSON 3.3 x 3.3 ABSOLUTE MAX... See More ⇒

8.1. Size:80K samhop
sp8009.pdf pdf_icon

Green Product SP8009 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 6.0 @ VGS=10V Suface Mount Package. 30V 24A 7.2 @ VGS=6V Pin 1 TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol P... See More ⇒

9.1. Size:114K samhop
sp8006.pdf pdf_icon

Green Product SP8006 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 4.5 @ VGS=4.5V Suface Mount Package. 4.7 @ VGS=4.0V 24V 12.5A 4.9 @ VGS=3.7V ESD Protected. 5.5 @ VGS=3.1V 6.0 @ VGS=2.5V D 5 4 G D 6 3 S 7 2 D... See More ⇒