HUF75339S3 Spec and Replacement
Type Designator: HUF75339S3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 124 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 2000 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO262AA
HUF75339S3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF75339S3 Specs
huf75339g3 huf75339p3 huf75339s3s.pdf
HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models ... See More ⇒
huf75339p3.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
huf75333g3 huf75333p3 huf75333s3s huf75333s3.pdf
HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Data Sheet December 2001 66A, 55V, 0.016 Ohm. N-Channel UltraFET Features Power MOSFETs 66A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impeda... See More ⇒
huf75337g3 huf75337p3 huf75337s3s.pdf
HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models ... See More ⇒
Detailed specifications: HUF75333S3 , HUF75333S3S , HUF75333S3ST , HUF75337G3 , HUF75337P3 , HUF75337S3S , HUF75339G3 , HUF75339P3 , 20N50 , HUF75339S3S , HUF75339S3ST , HUF75343G3 , HUF75343P3 , HUF75343S3S , HUF75344G3 , HUF75344P3 , HUF75344S3S .
Keywords - HUF75339S3 MOSFET specs
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