FDC8878 Specs and Replacement
Type Designator: FDC8878
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 318 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: SSOT6
FDC8878 substitution
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FDC8878 datasheet
fdc8878.pdf
January 2012 FDC8878 N-Channel PowerTrench MOSFET 30 V, 8.0 A, 16 m Features General Description Max rDS(on) = 16 m at VGS = 10 V, ID = 8.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 18 m at VGS = 4.5 V, ID = 7.5 A been optimized for rDS(on), switching performance. High performance trench t... See More ⇒
fdc8878.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fdc8886.pdf
January 2012 FDC8886 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 36 m at VGS = 4.5 V, ID = 6.0 A been optimized for rDS(on) switching performance. High performance trench te... See More ⇒
fdc8884.pdf
January 2012 FDC8884 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 6.0 A been optimized for rDS(on) switching performance. High performance trench te... See More ⇒
Detailed specifications: FDMS039N08B, FDT86256, FDI045N10A, FDP045N10A, FDP150N10A, FDP020N06B, FDP027N08B, FDMA8884, AON7408, FDC8884, FDZ661PZ, FDZ663P, FDMC86320, FDD8424HF085A, FDMS86320, FDD5N60NZ, FDD7N60NZ
Keywords - FDC8878 MOSFET specs
FDC8878 cross reference
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FDC8878 substitution
FDC8878 replacement
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History: FDZ661PZ | FCP190N60E
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