FDC8878 PDF and Equivalents Search

 

FDC8878 Specs and Replacement

Type Designator: FDC8878

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 318 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: SSOT6

FDC8878 substitution

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FDC8878 datasheet

 ..1. Size:250K  fairchild semi
fdc8878.pdf pdf_icon

FDC8878

January 2012 FDC8878 N-Channel PowerTrench MOSFET 30 V, 8.0 A, 16 m Features General Description Max rDS(on) = 16 m at VGS = 10 V, ID = 8.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 18 m at VGS = 4.5 V, ID = 7.5 A been optimized for rDS(on), switching performance. High performance trench t... See More ⇒

 ..2. Size:402K  onsemi
fdc8878.pdf pdf_icon

FDC8878

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.1. Size:261K  fairchild semi
fdc8886.pdf pdf_icon

FDC8878

January 2012 FDC8886 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 36 m at VGS = 4.5 V, ID = 6.0 A been optimized for rDS(on) switching performance. High performance trench te... See More ⇒

 9.2. Size:261K  fairchild semi
fdc8884.pdf pdf_icon

FDC8878

January 2012 FDC8884 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 6.0 A been optimized for rDS(on) switching performance. High performance trench te... See More ⇒

Detailed specifications: FDMS039N08B, FDT86256, FDI045N10A, FDP045N10A, FDP150N10A, FDP020N06B, FDP027N08B, FDMA8884, AON7408, FDC8884, FDZ661PZ, FDZ663P, FDMC86320, FDD8424HF085A, FDMS86320, FDD5N60NZ, FDD7N60NZ

Keywords - FDC8878 MOSFET specs

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