FDC8884
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDC8884
Marking Code: .884
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 6.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5.3
nC
trⓘ - Rise Time: 1
nS
Cossⓘ -
Output Capacitance: 135
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023
Ohm
Package:
SSOT6
FDC8884
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDC8884
Datasheet (PDF)
..1. Size:261K fairchild semi
fdc8884.pdf
January 2012FDC8884N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 6.0 Abeen optimized for rDS(on) switching performance. High performance trench te
..2. Size:863K cn vbsemi
fdc8884.pdf
FDC8884www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/DC C
8.1. Size:261K fairchild semi
fdc8886.pdf
January 2012FDC8886N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 36 m at VGS = 4.5 V, ID = 6.0 Abeen optimized for rDS(on) switching performance. High performance trench te
8.2. Size:411K onsemi
fdc8886.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.1. Size:250K fairchild semi
fdc8878.pdf
January 2012FDC8878N-Channel PowerTrench MOSFET 30 V, 8.0 A, 16 mFeatures General Description Max rDS(on) = 16 m at VGS = 10 V, ID = 8.0 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 18 m at VGS = 4.5 V, ID = 7.5 Abeen optimized for rDS(on), switching performance. High performance trench t
9.2. Size:402K onsemi
fdc8878.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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