FDMS8560S
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMS8560S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 68
nC
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 1270
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0018
Ohm
Package:
PQFN5X6
FDMS8560S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMS8560S
Datasheet (PDF)
..1. Size:295K fairchild semi
fdms8560s.pdf 
November 2014FDMS8560SN-Channel PowerTrench SyncFETTM25 V, 70 A, 1.8 mFeatures General Description Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 2.1 m at VGS = 4.5 V, ID = 28 AAdvancements in both silicon and package technologies have High performance te
8.1. Size:405K fairchild semi
fdms8558sdc.pdf
July 2013FDMS8558SDCN-Channel PowerTrench SyncFETTM25 V, 90 A, 1.5 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 38 AAdvancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V, ID = 3
8.2. Size:325K fairchild semi
fdms8558s.pdf
October 2014FDMS8558S(PCN)N-Channel PowerTrench SyncFETTM25 V, 90 A, 1.5 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 33 AAdvancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V,
8.3. Size:397K fairchild semi
fdms8570sdc.pdf
July 2013FDMS8570SDCN-Channel PowerTrench SyncFETTM25 V, 60 A, 2.8 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 2.8 m at VGS = 10 V, ID = 28 AAdvancements in both silicon and package technologies have Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 2
8.4. Size:290K fairchild semi
fdms8570s.pdf
November 2014FDMS8570SN-Channel PowerTrench SyncFETTM25 V, 60 A, 2.8 mFeatures General Description Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 3.1 m at VGS = 4.5 V, ID = 22 AAdvancements in both silicon and package technologies have High performance te
Datasheet: FDMC8321L
, FDMS86520
, FDMS3622S
, FDMS3624S
, FDD86113LZ
, FDMS8320L
, FDMS86500DC
, FDMS8558S
, P0903BDG
, FDMS8570S
, FDMS3660S
, FDMS3664S
, FDMS3668S
, FDMC8588
, FCP190N60E
, FCP380N60E
, FCPF190N60E
.
