FDMS3668S MOSFET Datasheet: N-Ch, 30V, 13A. Full specification with pinout and replacement list

FDMS3668S Specs and Replacement

Type Designator: FDMS3668S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.2 nS

Cossⓘ - Output Capacitance: 466 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: PQFN5X6

FDMS3668S substitution

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FDMS3668S datasheet

..1. Size:582K fairchild semi
fdms3668s.pdf pdf_icon

December 2012 FDMS3668S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 ... See More ⇒

7.1. Size:653K fairchild semi
fdms3660s.pdf pdf_icon

February 2015 FDMS3660S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 ... See More ⇒

7.2. Size:626K fairchild semi
fdms3664s.pdf pdf_icon

January 2015 FDMS3664S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V... See More ⇒

7.3. Size:246K fairchild semi
fdms3662.pdf pdf_icon

May 2009 FDMS3662 tm N-Channel Power Trench MOSFET 100V, 49A, 14.8m Features General Description Max rDS(on) = 14.8m at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Advanced Package and Silicon combination for low rDS(on) been especially tailored to minimize the on-state resistance and ... See More ⇒