FCP190N60E Specs and Replacement
Type Designator: FCP190N60E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 1795 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO220
FCP190N60E substitution
- MOSFET ⓘ Cross-Reference Search
FCP190N60E datasheet
fcp190n60e fcpf190n60e.pdf
December 2013 FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 160 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charg... See More ⇒
fcp190n60e fcpf190n60e.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fcp190n60 fcpf190n60.pdf
December 2013 FCP190N60 / FCPF190N60 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 170 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 5... See More ⇒
fcp190n60 gf102.pdf
December 2013 FCP190N60_GF102 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 170 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 57 nC) ... See More ⇒
Detailed specifications: FDMS86500DC, FDMS8558S, FDMS8560S, FDMS8570S, FDMS3660S, FDMS3664S, FDMS3668S, FDMC8588, 2SK3568, FCP380N60E, FCPF190N60E, FCPF380N60E, FDMS86310, FDMS3006SDC, FDMS3008SDC, HUF75852G3F085, FDMS3016DC
Keywords - FCP190N60E MOSFET specs
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