FCP190N60E PDF and Equivalents Search

 

FCP190N60E Specs and Replacement

Type Designator: FCP190N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 1795 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO220

FCP190N60E substitution

- MOSFET ⓘ Cross-Reference Search

 

FCP190N60E datasheet

 ..1. Size:641K  fairchild semi
fcp190n60e fcpf190n60e.pdf pdf_icon

FCP190N60E

December 2013 FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 160 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charg... See More ⇒

 ..2. Size:803K  onsemi
fcp190n60e fcpf190n60e.pdf pdf_icon

FCP190N60E

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 5.1. Size:650K  fairchild semi
fcp190n60 fcpf190n60.pdf pdf_icon

FCP190N60E

December 2013 FCP190N60 / FCPF190N60 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 170 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 5... See More ⇒

 5.2. Size:657K  fairchild semi
fcp190n60 gf102.pdf pdf_icon

FCP190N60E

December 2013 FCP190N60_GF102 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 170 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 57 nC) ... See More ⇒

Detailed specifications: FDMS86500DC, FDMS8558S, FDMS8560S, FDMS8570S, FDMS3660S, FDMS3664S, FDMS3668S, FDMC8588, 2SK3568, FCP380N60E, FCPF190N60E, FCPF380N60E, FDMS86310, FDMS3006SDC, FDMS3008SDC, HUF75852G3F085, FDMS3016DC

Keywords - FCP190N60E MOSFET specs

 FCP190N60E cross reference

 FCP190N60E equivalent finder

 FCP190N60E pdf lookup

 FCP190N60E substitution

 FCP190N60E replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.