FDMS3016DC Specs and Replacement
Type Designator: FDMS3016DC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 3.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ -
Output Capacitance: 513 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: PQFN5X6
- MOSFET ⓘ Cross-Reference Search
FDMS3016DC datasheet
..1. Size:555K fairchild semi
fdms3016dc.pdf 
July 2013 FDMS3016DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 6.0 m at VGS = 10 V, ID = 12 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m at VGS... See More ⇒
8.1. Size:399K fairchild semi
fdms3008sdc.pdf
July 2013 FDMS3008SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 65 A, 2.6 m Features General Description This N-Channel MOSFET is produced using Fairchild Dual CoolTM Top Side Cooling PQFN package Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.6 m at VGS = 10 V, ID = 28 A Advancements in both silicon and Dual CoolTM package technologies have been c... See More ⇒
8.2. Size:822K fairchild semi
fdms3006sdc.pdf
July 2013 FDMS3006SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 90 A, 1.9 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.9 m at VGS = 10 V, ID = 30 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 2.7 m at... See More ⇒
9.1. Size:587K fairchild semi
fdms3686s.pdf
January 2012 FDMS3686S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V... See More ⇒
9.2. Size:239K fairchild semi
fdms3500.pdf
May 2009 FDMS3500 tm N-Channel Power Trench MOSFET 75V, 49A, 14.5m Features General Description Max rDS(on) = 14.5m at VGS = 10V, ID = 11.5A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 16.3m at VGS = 4.5V, ID = 10A been especially tailored to minimize the on-state resistance and Advanced P... See More ⇒
9.3. Size:565K fairchild semi
fdms3600as.pdf
April 2011 FDMS3600AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.5 m at VGS = 4.5... See More ⇒
9.4. Size:252K fairchild semi
fdms3672.pdf
February 2007 FDMS3672 tm N-Channel UltraFET Trench MOSFET 100V, 22A, 23m Features General Description Max rDS(on) = 23m at VGS = 10V, ID = 7.4A UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Max rDS(on) = 29m at VGS = 6V, ID = 6.6A Optimized for rDS(on), low ESR, low total and Miller gate charge, Typ Qg = 31n... See More ⇒
9.5. Size:653K fairchild semi
fdms3660s.pdf
February 2015 FDMS3660S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 ... See More ⇒
9.6. Size:560K fairchild semi
fdms3615s.pdf
August 2011 FDMS3615S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.8 m at VGS = 10 V, ID = 16 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.3 m at VGS =... See More ⇒
9.7. Size:582K fairchild semi
fdms3668s.pdf
December 2012 FDMS3668S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 ... See More ⇒
9.8. Size:389K fairchild semi
fdms3624s.pdf
December 2011 FDMS3624S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro... See More ⇒
9.9. Size:543K fairchild semi
fdms3606s.pdf
December 2012 FDMS3606S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 ... See More ⇒
9.10. Size:397K fairchild semi
fdms3622s.pdf
December 2011 FDMS3622S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro... See More ⇒
9.11. Size:585K fairchild semi
fdms3602s.pdf
March 2011 FDMS3602S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.1 m at VGS = 4.5 ... See More ⇒
9.12. Size:521K fairchild semi
fdms3572.pdf
February 2007 FDMS3572 tm N-Channel UltraFET Trench MOSFET 80V, 22A, 16.5m Features General Description Max rDS(on) = 16.5m at VGS = 10V, ID = 8.8A UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Max rDS(on) = 24m at VGS = 6V, ID = 8.4A Optimized for rDS(on), low ESR, low total and Miller gate charge, Typ Qg ... See More ⇒
9.13. Size:388K fairchild semi
fdms3626s.pdf
December 2011 FDMS3626S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro... See More ⇒
9.14. Size:374K fairchild semi
fdms3610s.pdf
December 2011 FDMS3610S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro... See More ⇒
9.15. Size:626K fairchild semi
fdms3664s.pdf
January 2015 FDMS3664S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V... See More ⇒
9.16. Size:384K fairchild semi
fdms3600s.pdf
October 2010 FDMS3600S Dual N-Channel PowerTrench MOSFET N-Channel 25 V, 30 A, 5.6 m N-Channel 25 V, 40 A, 1.6 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchron... See More ⇒
9.17. Size:246K fairchild semi
fdms3662.pdf
May 2009 FDMS3662 tm N-Channel Power Trench MOSFET 100V, 49A, 14.8m Features General Description Max rDS(on) = 14.8m at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Advanced Package and Silicon combination for low rDS(on) been especially tailored to minimize the on-state resistance and ... See More ⇒
9.18. Size:368K fairchild semi
fdms3620s.pdf
July 2012 FDMS3620S PowerTrench PowerStage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 4.7 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.5 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and routing... See More ⇒
9.19. Size:581K fairchild semi
fdms3669s.pdf
January 2013 FDMS3669S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 10 m at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 14.5 m at VGS = 4.... See More ⇒
9.20. Size:602K fairchild semi
fdms3604s.pdf
January 2015 FDMS3604S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description This device includes two specialized N-Channel MOSFETs in a Q1 N-Channel dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V... See More ⇒
9.21. Size:412K fairchild semi
fdms3660as.pdf
July 2013 FDMS3660AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V, ... See More ⇒
9.22. Size:582K fairchild semi
fdms3604as.pdf
March 2011 FDMS3604AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V,... See More ⇒
9.23. Size:582K fairchild semi
fdms3606as.pdf
April 2011 FDMS3606AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V,... See More ⇒
9.24. Size:421K fairchild semi
fdms36101l f085.pdf
June 2013 FDMS36101L_F085 N-Channel Power Trench MOSFET 100V, 38A, 26m Features Typ rDS(on) = 18m at VGS = 10V, ID = 20A Typ Qg(tot) = 70nC at VGS = 10V, ID = 20A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primary Switch for 12V Sy... See More ⇒
9.25. Size:557K fairchild semi
fdms3602as.pdf
March 2011 FDMS3602AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.5 m at VGS = 4.5... See More ⇒
9.26. Size:693K onsemi
fdms3660s.pdf
FDMS3660S PowerTrench) Power Stage Asymmetric Dual N-Channel MOSFET Description This device includes two specialized N-Channel MOSFETs in a www.onsemi.com dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power ef... See More ⇒
9.27. Size:342K onsemi
fdms3d5n08lc.pdf
FDMS3D5N08LC MOSFET, N-Channel Shielded Gate, POWERTRENCH) 80 V, 136 A, 3.5 mW www.onsemi.com General Description This N-Channel MV MOSFET is produced using ELECTRICAL CONNECTION ON Semiconductor s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been G D 5 4 optimized to minimise on-state resistance and yet maintain superior switching ... See More ⇒
9.28. Size:456K onsemi
fdms3622s.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.29. Size:447K onsemi
fdms3626s.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.30. Size:611K onsemi
fdms3600s.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.31. Size:427K onsemi
fdms3620s.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FCP190N60E
, FCP380N60E
, FCPF190N60E
, FCPF380N60E
, FDMS86310
, FDMS3006SDC
, FDMS3008SDC
, HUF75852G3F085
, IRF520
, FDMS86101DC
, FCP380N60
, FCPF380N60
, FDMS3686S
, FDMA8878
, FDMS86101A
, FDPC8011S
, HUF75639SF085A
.
History: FCP104N60
| FCH130N60
| FQB46N15
Keywords - FDMS3016DC MOSFET specs
FDMS3016DC cross reference
FDMS3016DC equivalent finder
FDMS3016DC pdf lookup
FDMS3016DC substitution
FDMS3016DC replacement
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