All MOSFET. FDMS86101A Datasheet

 

FDMS86101A Datasheet and Replacement


   Type Designator: FDMS86101A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.4 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: PQFN5X6
 

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FDMS86101A Datasheet (PDF)

 ..1. Size:317K  fairchild semi
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FDMS86101A

October 2014FDMS86101AN-Channel Shielded Gate PowerTrench MOSFET100 V, 60 A, 8 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aincorporates Shielded Gate technology. This process has been optimized for the on-stat

 ..2. Size:426K  onsemi
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FDMS86101A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.1. Size:480K  1
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FDMS86101A

MOSFET - NChannel,POWERTRENCH)100 V, 60 A, 8 mWFDMS86101General DescriptionThis N-Channel MOSFET is produced using ON Semiconductorswww.onsemi.comadvanced POWERTRENCH process that has been especiallytailored to minimize the on-state resistance and yet maintain superiorswitching performance.SDFeaturesDS Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A Max

 5.2. Size:407K  fairchild semi
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FDMS86101A

July 2013FDMS86101DCN-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET100 V, 60 A, 7.5 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN packageincorporates Shielded Gate technology. Advancements in both Max rDS(on) = 7.5

Datasheet: FDMS3008SDC , HUF75852G3F085 , FDMS3016DC , FDMS86101DC , FCP380N60 , FCPF380N60 , FDMS3686S , FDMA8878 , AO3401 , FDPC8011S , HUF75639SF085A , FDMS3620S , FDMS86300DC , FCPF400N60 , FDD86540 , FDMS015N04B , FDD390N15ALZ .

History: PTA08N100 | 3SK323

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