HUF76633P3F085
MOSFET. Datasheet pdf. Equivalent
Type Designator: HUF76633P3F085
Marking Code: 76633P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 145
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 39
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 56
nC
trⓘ - Rise Time: 110
nS
Cossⓘ -
Output Capacitance: 415
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035
Ohm
Package:
TO220
HUF76633P3F085
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF76633P3F085
Datasheet (PDF)
4.1. Size:369K fairchild semi
huf76633p3 f085.pdf
HUF76633P3_F085Data Sheet April 201238A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB Ultra Low On-Resistance- rDS(ON) = 0.035, VGS = 10VSOURCEDRAIN- rDS(ON) = 0.036, VGS = 5VGATE Simulation Models- Temperature Compensated PSPICE and SABER Electrical Models- Spice and SABER Thermal Impedance Model
4.2. Size:223K fairchild semi
huf76633p3-s3s.pdf
HUF76633P3, HUF76633S3SData Sheet December 200138A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceDRAINSOURCE (FLANGE)- rDS(ON) = 0.035, VGS = 10VDRAINGATE- rDS(ON) = 0.036, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl
4.3. Size:843K cn vbsemi
huf76633p3.pdf
HUF76633P3www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.032 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDTO-220AB GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C,
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