All MOSFET. FCB20N60F_F085 Datasheet

 

FCB20N60F_F085 MOSFET. Datasheet pdf. Equivalent

Type Designator: FCB20N60F_F085

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 405 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 Ā°C

Maximum Drain-Source On-State Resistance (Rds): 0.195 Ohm

Package: TO263_D2PAK

FCB20N60F_F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCB20N60F_F085 Datasheet (PDF)

1.1. fcb20n60f.pdf Size:1152K _fairchild_semi

FCB20N60F_F085
FCB20N60F_F085

December 2008 TM SuperFET FCB20N60F 600V N-CHANNEL FRFET Features Description • 650V @ TJ = 150°C SuperFETTM is,Fairchild' s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.15? balance mechanism for outstanding low on-resistance and • Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This advanced tech

1.2. fcb20n60f f085.pdf Size:354K _fairchild_semi

FCB20N60F_F085
FCB20N60F_F085

ļ»æDecember 2013 FCB20N60F_F085 N-Channel MOSFET 600V, 20A, 190mĪ© D D Features Typ rDS(on) = 171mĪ© at VGS = 10V, ID = 20A Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A G UIS Capability RoHS Compliant G Qualified to AEC Q101 S S Description SuperFETTM is Fairchildā€™s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance ForĀ currentĀ pack

2.1. fcb20n60 f085.pdf Size:363K _fairchild_semi

FCB20N60F_F085
FCB20N60F_F085

ļ»æNovember 2013 FCB20N60_F085 N-Channel MOSFET 600V, 20A, 198mĪ© D D Features Typ rDS(on) = 173mĪ© at VGS = 10V, ID = 20A Typ Qg(tot) = 72nC at VGS = 10V, ID = 20A G UIS Capability RoHS Compliant G Qualified to AEC Q101 S S Description SuperFETTM is Fairchildā€™s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance ForĀ currentĀ packa

2.2. fcb20n60.pdf Size:964K _fairchild_semi

FCB20N60F_F085
FCB20N60F_F085

December 2008 TM SuperFET FCB20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. RDS(on) = 0.15? balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg = 75nC) lower gate charge performance. • Low effective o

Datasheet: FDP039N08B , FDME820NZT , FDS86540 , FDPF18N20FT_G , HUF76633P3_F085 , FDMS030N06B , FDMA3027PZ , FDP053N08B , IRFP4229 , FDMS8570SDC , FDMC8588DC , FDMS8558SDC , FDMC86160 , FDB2552_F085 , FDMS86150 , FDMC89521L , FDMQ86530L .

 


FCB20N60F_F085
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