FDB3632F085 PDF and Equivalents Search

 

FDB3632F085 Specs and Replacement

Type Designator: FDB3632F085

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 310 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 820 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO263 D2PAK

FDB3632F085 substitution

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FDB3632F085 datasheet

 7.1. Size:484K  fairchild semi
 fdb3632 f085.pdf pdf_icon

FDB3632F085

March 2012 FDB3632_F085 N-Channel PowerTrench MOSFET 100V, 80A, 9m Features Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Recti... See More ⇒

 7.2. Size:656K  fairchild semi
 fdb3632 fdp3632 fdi3632 fdh3632.pdf pdf_icon

FDB3632F085

December 2008 FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench MOSFET 100V, 80A, 9m Features Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode Hi... See More ⇒

 7.3. Size:860K  onsemi
 fdh3632 fdp3632 fdb3632.pdf pdf_icon

FDB3632F085

MOSFET Power, N-Channel, POWERTRENCH) 100 V, 80 A, 9 mW FDH3632, FDP3632, FDB3632 www.onsemi.com Features RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A Qg (tot) = 84 nC (Typ.), VGS = 10 V VDSS RDS(ON) MAX ID MAX Low Miller Charge 100 V 9 mW 80 A Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) D These Devices are Pb-Free and are R... See More ⇒

 7.4. Size:1298K  onsemi
 fdb3632-f085.pdf pdf_icon

FDB3632F085

FDB3632-F085 N-Channel PowerTrench MOSFET Applications 100V, 80A, 9m DC/DC converters and Off-Line UPS Features Distributed Power Architectures and VRMs rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A Primary Switch for 24V and 48V Systems Qg(tot) = 84nC (Typ.), VGS = 10V High Voltage Synchronous Rectifier Low Miller Charge Low QRR Body Diode ... See More ⇒

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Detailed specifications: FDB9403F085 , FCP600N60Z , FCPF600N60Z , FDT1600N10ALZ , FDMC86012 , FDMC86520DC , FDMS037N08B , FDP032N08B , IRF3710 , FDME430NT , FDMS8090 , FDP030N06BF102 , FDI9406F085 , FCH041N60F , FDD10AN06F085 , FDMC86260 , FDMS86200DC .

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