FDP030N06BF102 Specs and Replacement
Type Designator: FDP030N06BF102
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 205 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 1685 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
Package: TO220
FDP030N06BF102 substitution
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FDP030N06BF102 datasheet
fdp030n06b f102.pdf
November 2013 FDP030N06B_F102 N-Channel PowerTrench MOSFET 60 V, 195 A, 3.1 m Features Description RDS(on) = 2.67 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Low FOM RDS(on) * QG lored to minimize the on-state resistance while maintaining superior switching perfor... See More ⇒
fdp030n06b f102.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fdp030n06.pdf
June 2009 FDP030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2m Features Description RDS(on) = 2.6m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performance. ... See More ⇒
fdp030n06.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FDT1600N10ALZ , FDMC86012 , FDMC86520DC , FDMS037N08B , FDP032N08B , FDB3632F085 , FDME430NT , FDMS8090 , IRFB4115 , FDI9406F085 , FCH041N60F , FDD10AN06F085 , FDMC86260 , FDMS86200DC , FDMS8333L , FDP023N08B , FCPF36N60N .
History: FDMS037N08B | RQK0303MGDQA | IRF452
Keywords - FDP030N06BF102 MOSFET specs
FDP030N06BF102 cross reference
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FDP030N06BF102 substitution
FDP030N06BF102 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: FDMS037N08B | RQK0303MGDQA | IRF452
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