All MOSFET. FDD1600N10ALZ Datasheet

 

FDD1600N10ALZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDD1600N10ALZ
   Marking Code: 1600N10ALZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 14.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
   |Id|ⓘ - Maximum Drain Current: 6.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.78 nC
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 43 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO252

 FDD1600N10ALZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD1600N10ALZ Datasheet (PDF)

 ..1. Size:1043K  fairchild semi
 fdd1600n10alz.pdf

FDD1600N10ALZ FDD1600N10ALZ

January 2014FDD1600N10ALZN-Channel PowerTrench MOSFET100 V, 6.8 A, 160 mFeatures Description RDS(on) = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchld Semicon-ductors advanced PowerTrench process that has been tai- RDS(on) = 175 m (Typ.) @ VGS = 5 V, ID = 2.1 Alored to minimize the on-state resistance and maintain s

 ..2. Size:1148K  onsemi
 fdd1600n10alz.pdf

FDD1600N10ALZ FDD1600N10ALZ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:836K  fairchild semi
 fdd1600n10alzd.pdf

FDD1600N10ALZ FDD1600N10ALZ

November 2013FDD1600N10ALZD BoostPak (N-Channel PowerTrench MOSFET + Diode)100 V, 6.8 A, 160 mFeatures Description RDS(on) = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors PowerTrench process that has been tailored to mini- RDS(on) = 175 m (Typ.) @ VGS = 5.0 V, ID = 2.1 Amize the on-state resistance whil

 9.1. Size:242K  fairchild semi
 fdd16an08a0.pdf

FDD1600N10ALZ FDD1600N10ALZ

May 2002FDD16AN08A0N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Sing

 9.2. Size:2944K  fairchild semi
 fdd16an08a0 f085 fdd16an08 f085.pdf

FDD1600N10ALZ FDD1600N10ALZ

October 2008FDD16AN08A0_F085N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capabil

 9.3. Size:239K  fairchild semi
 fdd16an08a0 nf054.pdf

FDD1600N10ALZ FDD1600N10ALZ

May 2002FDD16AN08A0N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Sing

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: DMN3016LFDE

 

 
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