All MOSFET. FCD600N60Z Datasheet

 

FCD600N60Z MOSFET. Datasheet pdf. Equivalent

Type Designator: FCD600N60Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 89 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 7.4 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: TO252

FCD600N60Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCD600N60Z Datasheet (PDF)

1.1. fcd600n60z.pdf Size:606K _fairchild_semi

FCD600N60Z
FCD600N60Z

November 2013 FCD600N60Z N-Channel SuperFET® II MOSFET 600 V, 7.4 A, 600 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 510 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 20 nC) and lo

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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