FDN537N Specs and Replacement
Type Designator: FDN537N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1 nS
Cossⓘ - Output Capacitance: 143 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: SSOT3
FDN537N substitution
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FDN537N datasheet
fdn537n.pdf
January 2013 FDN537N Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 36 m at VGS = 4.5 V, ID = 6.0 A been optimized for rDS(on), switching performance and High performanc... See More ⇒
fdn537n.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fdn537n.pdf
FDN537N www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G ... See More ⇒
Detailed specifications: FDD1600N10ALZD , FDD850N10LD , FCH072N60F , FDMB2308PZ , FDMS3669S , FDZ1323NZ , FDPC8012S , FDMS86152 , IRFB3607 , FDB9406F085 , FDD120AN15F085 , FDPC4044 , FDMC8360L , FDMC86340 , FDMC86570L , FDN371N , FCH104N60F .
Keywords - FDN537N MOSFET specs
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