All MOSFET. FDMC86340 Datasheet

 

FDMC86340 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDMC86340
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 38 nC
   trⓘ - Rise Time: 7.9 nS
   Cossⓘ - Output Capacitance: 468 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: PQFN3.3X3.3

 FDMC86340 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMC86340 Datasheet (PDF)

 ..1. Size:241K  fairchild semi
 fdmc86340.pdf

FDMC86340 FDMC86340

January 2014FDMC86340N-Channel Shielded Gate Power Trench MOSFET80 V, 48 A, 6.5 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 6.5 m at VGS = 10 V, ID = 14 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 8.5 m

 0.1. Size:281K  fairchild semi
 fdmc86340et80.pdf

FDMC86340 FDMC86340

January 2015FDMC86340ET80N-Channel Shielded Gate Power Trench MOSFET80 V, 68 A, 6.5 mFeatures General Description Extended TJ rating to 175C This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Shielded Gate MOSFET Technologyincorporates Shielded Gate technology. This process has been Max rDS(on) = 6.5 m at VGS = 10

 7.1. Size:299K  fairchild semi
 fdmc86324.pdf

FDMC86340 FDMC86340

May 2010FDMC86324N-Channel Power Trench MOSFET 80 V, 20 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 37 m at VGS = 6 V, ID = 4 Abeen especially tailored to minimize the on-state resistance and Low Profile - 1 mm

 7.2. Size:492K  fairchild semi
 fdmc86320.pdf

FDMC86340 FDMC86340

June 2014FDMC86320N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mFeatures General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 16 m at VGS = 8 V, ID = 8.5 Aringing of DC/DC converters using either synchronous or MSL1 robust

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK1840

 

 
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