All MOSFET. FDMS86252L Datasheet

 

FDMS86252L MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDMS86252L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 1.4 nS
   Cossⓘ - Output Capacitance: 74 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: PQFN5X6

 FDMS86252L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMS86252L Datasheet (PDF)

 ..1. Size:398K  1
 fdms86252l.pdf

FDMS86252L FDMS86252L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..2. Size:290K  fairchild semi
 fdms86252l.pdf

FDMS86252L FDMS86252L

October 2014FDMS86252LN-Channel Shielded Gate PowerTrench MOSFET150 V, 12 A, 56 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 56 m at VGS = 10 V, ID = 4.4 Aincorporates Shielded Gate technology. This process has been optimized for the on

 ..3. Size:398K  onsemi
 fdms86252l.pdf

FDMS86252L FDMS86252L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.1. Size:399K  1
 fdms86252.pdf

FDMS86252L FDMS86252L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.2. Size:262K  fairchild semi
 fdms86252.pdf

FDMS86252L FDMS86252L

August 2010FDMS86252N-Channel PowerTrench MOSFET 150 V, 16 A, 51 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 ASemiconductors advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 Abeen especially tailored to minimize the on-state resistance and yet maintain

 5.3. Size:399K  onsemi
 fdms86252.pdf

FDMS86252L FDMS86252L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMO18N65EM | HM2301B | VS4401ATH | BFC43

 

 
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