FQP3N50C Specs and Replacement
Type Designator: FQP3N50C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 62 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO220
FQP3N50C substitution
- MOSFET ⓘ Cross-Reference Search
FQP3N50C datasheet
fqp3n50c fqpf3n50c.pdf
QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description 3 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 10 nC ) DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to... See More ⇒
fqp3n50c fqpf3n50c.pdf
QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description 3 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 10 nC ) DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to... See More ⇒
fqp3n80c fqpf3n80c.pdf
TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored t... See More ⇒
fqp3n60.pdf
April 2000 TM QFET QFET QFET QFET FQP3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 600V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been es... See More ⇒
Detailed specifications: FCPF400N80Z , FCH47N60F085 , FDMS86255 , FDBL86210F085 , FDMS86263P , FCMT199N60 , FQA13N50CF109 , FQP2P40 , AOD4184A , FDB20N50F , FDH210N08 , FDMC86139P , FDZ1416NZ , FDMS8350L , FDD9407F085 , FDMC86259P , FDMS5360LF085 .
Keywords - FQP3N50C MOSFET specs
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