FDMC86139P PDF and Equivalents Search

 

FDMC86139P Specs and Replacement

Type Designator: FDMC86139P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 4.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 178 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm

Package: MLP3.3X3.3

FDMC86139P substitution

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FDMC86139P datasheet

 ..1. Size:382K  fairchild semi
fdmc86139p.pdf pdf_icon

FDMC86139P

June 2014 FDMC86139P P-Channel PowerTrench MOSFET -100 V, -15 A, 67 m Features General Description Max rDS(on) = 67 m at VGS = -10 V, ID = -4.4 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench technology. This Max rDS(on) = 89 m at VGS = -6 V, ID = -3.6 A very high density process is especially tailored to minimize Very low RDS-... See More ⇒

 7.1. Size:381K  1
fdmc86116lz.pdf pdf_icon

FDMC86139P

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 7.2. Size:195K  fairchild semi
fdmc86160.pdf pdf_icon

FDMC86139P

September 2014 FDMC86160 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 14 m at VGS = 10 V, ID = 9 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 23 m ... See More ⇒

 7.3. Size:313K  fairchild semi
fdmc86102l.pdf pdf_icon

FDMC86139P

December 2010 FDMC86102L N-Channel Power Trench MOSFET 100 V, 18 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 4.5 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and Low Prof... See More ⇒

Detailed specifications: FDBL86210F085 , FDMS86263P , FCMT199N60 , FQA13N50CF109 , FQP2P40 , FQP3N50C , FDB20N50F , FDH210N08 , IRFP064N , FDZ1416NZ , FDMS8350L , FDD9407F085 , FDMC86259P , FDMS5360LF085 , FDMS5362LF085 , FDMD84100 , FCH041N60E .

History: MMBF5462 | FHD15N10A

Keywords - FDMC86139P MOSFET specs

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