FDMC86139P Datasheet and Replacement
Type Designator: FDMC86139P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 4.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 178 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm
Package: MLP3.3X3.3
- MOSFET Cross-Reference Search
FDMC86139P Datasheet (PDF)
fdmc86139p.pdf

June 2014FDMC86139PP-Channel PowerTrench MOSFET -100 V, -15 A, 67 mFeatures General Description Max rDS(on) = 67 m at VGS = -10 V, ID = -4.4 A This P-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench technology. This Max rDS(on) = 89 m at VGS = -6 V, ID = -3.6 Avery high density process is especially tailored to minimize Very low RDS-
fdmc86116lz.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdmc86160.pdf

September 2014FDMC86160N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 14 m at VGS = 10 V, ID = 9 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 23 m
fdmc86102l.pdf

December 2010FDMC86102LN-Channel Power Trench MOSFET 100 V, 18 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 4.5 V, ID = 5.5 Abeen especially tailored to minimize the on-state resistance and Low Prof
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK1512-01 | AP9926GEO | RW1C020UN | IRF441 | STD4N62K3 | CS7N65A4TDY | GSM3050S
Keywords - FDMC86139P MOSFET datasheet
FDMC86139P cross reference
FDMC86139P equivalent finder
FDMC86139P lookup
FDMC86139P substitution
FDMC86139P replacement
History: 2SK1512-01 | AP9926GEO | RW1C020UN | IRF441 | STD4N62K3 | CS7N65A4TDY | GSM3050S



LIST
Last Update
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
2n2924 | mpsa65 | 2sa794 | 2sa816 | 2sc897 datasheet | 2sd389 | mp41 transistor | nkt275 datasheet