FDMC86259P PDF and Equivalents Search

 

FDMC86259P Specs and Replacement

Type Designator: FDMC86259P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.3 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.107 Ohm

Package: PQFN3.3X3.3

FDMC86259P substitution

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FDMC86259P datasheet

 ..1. Size:172K  fairchild semi
fdmc86259p.pdf pdf_icon

FDMC86259P

February 2014 FDMC86259P P-Channel PowerTrench MOSFET -150 V, -13 A, 107 m Features General Description Max rDS(on) = 107 m at VGS = -10 V, ID = -3 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 137 m at VGS = -6 V, ID = -2.7 A been especially tailored to minimize the on-state resistance and Very l... See More ⇒

 7.1. Size:465K  1
fdmc8622.pdf pdf_icon

FDMC86259P

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 7.2. Size:374K  1
fdmc86244.pdf pdf_icon

FDMC86259P

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 7.3. Size:315K  fairchild semi
fdmc86240.pdf pdf_icon

FDMC86259P

July 2010 FDMC86240 N-Channel Power Trench MOSFET 150 V, 16 A, 51 m Features General Description Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 A been especially tailored to minimize the on-state resistance and Low Profile -... See More ⇒

Detailed specifications: FQP2P40, FQP3N50C, FDB20N50F, FDH210N08, FDMC86139P, FDZ1416NZ, FDMS8350L, FDD9407F085, IRF3205, FDMS5360LF085, FDMS5362LF085, FDMD84100, FCH041N60E, FDMC6686P, FDMS86150A, FDMS8670S, FDMS0308AS

Keywords - FDMC86259P MOSFET specs

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