HUF75645P3 MOSFET. Datasheet pdf. Equivalent
Type Designator: HUF75645P3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 310 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 198 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO220AB
HUF75645P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF75645P3 Datasheet (PDF)
huf75645p3 huf75645s3s.pdf
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huf75645p3 huf75645s3s.pdf
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huf75645s3st.pdf
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huf75623s3st.pdf
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huf75631sk8.pdf
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huf75652g3.pdf
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huf75631s3s.pdf
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huf75631sk8t.pdf
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huf75637s3 huf75637s3st.pdf
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huf75637.pdf
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huf75631s3st.pdf
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huf75652g3.pdf
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huf75639g3 huf75639p3 huf75639s3s huf75639s3.pdf
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huf75623p3.pdf
HUF75623P3Data Sheet November 1999 File Number 480422A, 100V, 0.064 Ohm, N-Channel,UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB Ultra Low On-Resistance- rDS(ON) = 0.064, VGS = 10VSOURCEDRAIN Simulation ModelsGATE- Temperature Compensated PSPICE and SABERElectrical Models- Spice and SABER Thermal Impedance Models- www.intersil.comDRAIN (
Datasheet: HUF75623P3 , HUF75631P3 , HUF75631SK8 , HUF75637P3 , HUF75637S3S , HUF75639G3 , HUF75639P3 , HUF75639S3S , 2SK3918 , HUF75645S3S , HUF75652G3 , HUF76105DK8 , HUF76105SK8 , HUF76107D3 , HUF76107D3S , HUF76107P3 , HUF76113DK8 .
