FDMS0312AS Specs and Replacement
Type Designator: FDMS0312AS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.3 nS
Cossⓘ - Output Capacitance: 550 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: PQFN5X6
FDMS0312AS substitution
- MOSFET ⓘ Cross-Reference Search
FDMS0312AS datasheet
fdms0312as.pdf
October 2014 FDMS0312AS N-Channel PowerTrench SyncFETTM 30 V, 22 A, 5.0 m Features General Description The FDMS0312AS has been designed to minimize losses in Max rDS(on) = 5.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 6.2 m at VGS = 4.5 V, ID = 16 A package technologies have been combined to offer the lowest A... See More ⇒
fdms0312s.pdf
January 2010 FDMS0312S N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4.4 m Features General Description The FDMS0312S has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.8 m at VGS = 4.5 V, ID = 14 A package technologies have been combined to offer the lowest ... See More ⇒
fdms0310s.pdf
January 2015 FDMS0310S N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4 m Features General Description The FDMS0310S has been designed to minimize losses in Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 14 A package technologies have been combined to offer the lowest Advan... See More ⇒
fdms0310as.pdf
August 2014 FDMS0310AS N-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 m Features General Description The FDMS0310AS has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest A... See More ⇒
Detailed specifications: FDMD84100, FCH041N60E, FDMC6686P, FDMS86150A, FDMS8670S, FDMS0308AS, FDMS0309AS, FDMS0310AS, IRLZ44N, FQB27N25TMF085, FDBL9403F085, FDBL9406F085, FDMS86163P, FDBL9401F085, FDD9409F085, FDMA86265P, FDMC86265P
Keywords - FDMS0312AS MOSFET specs
FDMS0312AS cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: KDS4501H
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