FDMC86265P PDF and Equivalents Search

 

FDMC86265P Specs and Replacement

Type Designator: FDMC86265P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.2 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: MLP3.3X3.3

FDMC86265P substitution

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FDMC86265P datasheet

 ..1. Size:288K  fairchild semi
fdmc86265p.pdf pdf_icon

FDMC86265P

May 2014 FDMC86265P P-Channel PowerTrench MOSFET -150 V, -1 A, 1.2 Features General Description Max rDS(on) = 1.2 at VGS = -10 V, ID = -1 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.9 A has been optimized for the on-state resistance and yet maintain Very low RDS-on mid... See More ⇒

 6.1. Size:246K  fairchild semi
fdmc86260.pdf pdf_icon

FDMC86265P

December 2012 FDMC86260 N-Channel Power Trench MOSFET 150 V, 16 A, 34 m Features General Description Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 44 m at VGS = 6 V, ID = 4.8 A been especially tailored to minimize the on-state resistance and High perf... See More ⇒

 6.2. Size:269K  fairchild semi
fdmc86260et150.pdf pdf_icon

FDMC86265P

January 2015 FDMC86260ET150 N-Channel Power Trench MOSFET 150 V, 25 A, 34 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 A been especially tailored to minimize the on-state resistance and Max rDS(on) = 44 m at... See More ⇒

 6.3. Size:379K  fairchild semi
fdmc86261p.pdf pdf_icon

FDMC86265P

June 2014 FDMC86261P P-Channel PowerTrench MOSFET -150 V, -9 A, 160 m Features General Description Max rDS(on) = 160 m at VGS = -10 V, ID = -2.4 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench technology. This Max rDS(on) = 185 m at VGS = -6 V, ID = -2.2 A very high density process is especially tailored to minimize Very low RD... See More ⇒

Detailed specifications: FDMS0312AS, FQB27N25TMF085, FDBL9403F085, FDBL9406F085, FDMS86163P, FDBL9401F085, FDD9409F085, FDMA86265P, AON6414A, FDMD82100L, FCH041N65F, FCH130N60, FCH170N60, FDN86265P, FCH077N65F, FCH190N65F, FDB86363F085

Keywords - FDMC86265P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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