FCPF850N80Z PDF and Equivalents Search

 

FCPF850N80Z Specs and Replacement

Type Designator: FCPF850N80Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO220F

FCPF850N80Z substitution

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FCPF850N80Z datasheet

 ..1. Size:633K  fairchild semi
fcpf850n80z.pdf pdf_icon

FCPF850N80Z

August 2014 FCPF850N80Z N-Channel SuperFET II MOSFET 800 V, 6 A, 850 m Features Description Typ. RDS(on) = 710 m (Typ.) SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 22 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ. 2.3 uJ @... See More ⇒

 ..2. Size:498K  onsemi
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FCPF850N80Z

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FDB86363F085 , FCH104N60 , FCP104N60 , FDPF39N20TLDTU , FDPF44N25TRDTU , FDPF51N25RDTU , FQPF5P20RDTU , FDP86363F085 , AO3401 , FCP150N65F , FCPF1300N80Z , FDA16N50LDTU , FDPF33N25TRDTU , FCH072N60 , FCMT299N60 , FDMS8050 , FCH150N65FF155 .

Keywords - FCPF850N80Z MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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