All MOSFET. FCPF850N80Z Datasheet

 

FCPF850N80Z Datasheet and Replacement


   Type Designator: FCPF850N80Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO220F
 

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FCPF850N80Z Datasheet (PDF)

 ..1. Size:633K  fairchild semi
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FCPF850N80Z

August 2014FCPF850N80ZN-Channel SuperFET II MOSFET800 V, 6 A, 850 mFeatures Description Typ. RDS(on) = 710 m (Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 22 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 2.3 uJ @

 ..2. Size:498K  onsemi
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FCPF850N80Z

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FDB86363F085 , FCH104N60 , FCP104N60 , FDPF39N20TLDTU , FDPF44N25TRDTU , FDPF51N25RDTU , FQPF5P20RDTU , FDP86363F085 , AO3400 , FCP150N65F , FCPF1300N80Z , FDA16N50LDTU , FDPF33N25TRDTU , FCH072N60 , FCMT299N60 , FDMS8050 , FCH150N65FF155 .

History: IRF523FI | SFP60N100

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