FCMT299N60 Datasheet and Replacement
Type Designator: FCMT299N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 30 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.299 Ohm
Package: PQFN8X8
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FCMT299N60 Datasheet (PDF)
fcmt299n60.pdf

August 2014FCMT299N60N-Channel SuperFET II MOSFET 600 V, 12 A, 299 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing RDS(on) = 250 m (Typ.)charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 39 nC) an
fcmt299n60.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcmt250n65s3.pdf

MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 12 A, 250 mWFCMT250N65S3DescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimize VDSS RDS(ON
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SM6A12NSFP | FCPF7N60YDTU
Keywords - FCMT299N60 MOSFET datasheet
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History: SM6A12NSFP | FCPF7N60YDTU



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