FCP170N60 Specs and Replacement
Type Designator: FCP170N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO220
FCP170N60 substitution
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FCP170N60 datasheet
fcp170n60.pdf
September 2014 FCP170N60 N-Channel SuperFET II MOSFET 600 V, 22 A, 170 m Features Description 650 V @TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 150 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 42 nC) and l... See More ⇒
fcp170n60.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fcp170n60.pdf
isc N-Channel MOSFET Transistor FCP170N60 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA... See More ⇒
Detailed specifications: FCPF260N65FL1 , FCPF380N65FL1 , FCP130N60 , FCPF400N80ZL1 , FCD1300N80Z , FDMA86151L , FPF1C2P5BF07A , FPF1C2P5MF07AM , STP80NF70 , FCPF190N65FL1 , FCU4300N80Z , FDD9410F085 , FDBL0065N40 , FDBL0090N40 , FDBL0120N40 , FDBL0630N150 , FDMD8280 .
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