All MOSFET. FCU850N80Z Datasheet

 

FCU850N80Z Datasheet and Replacement


   Type Designator: FCU850N80Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 22 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO251 IPAK
 

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FCU850N80Z Datasheet (PDF)

 ..1. Size:930K  fairchild semi
 fcd850n80z fcu850n80z.pdf pdf_icon

FCU850N80Z

October 2014FCD850N80Z / FCU850N80Z N-Channel SuperFET II MOSFET800 V, 6 A, 850 mFeatures Description Typ. RDS(on) = 710 mTyp.) SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 22 nC)charge balance technology for outstanding low on-resistance

 ..2. Size:1727K  onsemi
 fcd850n80z fcu850n80z.pdf pdf_icon

FCU850N80Z

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: H01P13K | HFS7N80A

Keywords - FCU850N80Z MOSFET datasheet

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