2SK3255 Datasheet and Replacement
Type Designator: 2SK3255
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 44 nC
tr ⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO220FI
2SK3255 substitution
2SK3255 Datasheet (PDF)
2sk3255.pdf
2SK3255N- Channel MOS Silicon FETVery High-Speed Switching ApplicationsTENTATIVEFeatures and Applications Low ON-state resistance. Low Qg. Absolute Maximum Ratings / Ta=25C unitDrain to Source Voltage VDSS 900 VGate to Source Voltage VGSS 30 VDrain Current(DC) ID* 5 ADrain Current(Pulse) IDP 15 AAllowable power Dissipation PD 35 W(TC=25C) Channel Tempera
2sk3273-01mr.pdf
N-channel MOS-FET2SK3273-01MR6,5mTrench Gate MOSFET 60V 70A 70W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Avalanche Rated> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), u
2sk3218-01.pdf
FUJI POWER MOS-FET2SK3218-01N-CHANNEL SILICON POWER MOS-FETTO-220AB FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators UPS (Uninterruptible Power Supply)3. Source DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25C unles
2sk3217-01mr.pdf
FUJI POWER MOS-FET2SK3217-01MRN-CHANNEL SILICON POWER MOS-FETTO-220F15 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications2.54 Switching regulators UPS (Uninterruptible Power Supply)3. Source DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25
2sk3270-01.pdf
N-channel MOS-FET2SK3270-016,5mTrench Gate MOSFET 60V 80A 135W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Avalanche Rated> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), u
2sk3215.pdf
2SK3215Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-764(Z)Target Specification 1st. EditionDec. 1998Features Low on-resistanceRDS = 350m typ. High speed switching 4V gate drive device can be driven from 5V sourceOutlineTO220ABDG1. Gate12. Drain(Flange23. Source3S2SK3215Absolute Maximum Ratings (Ta = 25C)Item Symbol
2sk3216-01.pdf
FUJI POWER MOS-FET2SK3216-01N-CHANNEL SILICON POWER MOS-FETTO-220AB FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators UPS (Uninterruptible Power Supply)3. Source DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25C unles
2sk3234.pdf
2SK3234 N MOS FETADJ-208-696F (Z) 7 2002.01 RDS(on) =0.65 typ. IDSS=1A max (at VDS=500V) tf=25ns typ (at VGS=10V, VDD=250V, ID=4A) (Qg)Qg=25nC typ (VDD=400V,
2sk3235.pdf
2SK3235Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-1371 (Z)1st. EditionMar. 2001Features Low on-resistance: RDS(on) = 0.3 typ. Low leakage current: IDSS = 1 A max (at VDS = 500 V) High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A) Low gate charge: Qg = 48 nC typ (at VDD = 400 V, VGS = 10 V, ID = 15 A) Avalanch
2sk3265.pdf
2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3265 Chopper Regulators DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.72 (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 700 V) Enhancement mode : Vth = 2.0~4.0 V (VDS
2sk3296.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3296SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEORDERING INFORMATIONDESCRIPTION The 2SK3296 is N-Channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3296 TO-220ABdesigned for low voltage high current applications such as2SK3296-S TO-262DC/DC converter wit
2sk3205.pdf
2SK3205 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK3205 Switching Regulator Applications DC-DC Converter, and Unit: mmMotor Drive Applications 4 V gate drive Low drain-source ON resistance : RDS (ON) = 0.36 (typ.) High forward transfer admittance : |Yfs| = 4.5 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 150 V)
2sk3236.pdf
2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236 Switching Regulator Applications, DC-DC Converter and Unit: mmMotor Drive Applications 4 V gate drive Low drain-source ON resistance: R = 13.5 m (typ.) DS (ON) High forward transfer admittance: |Y | = 42 S (typ.) fs Low leakage current: IDSS = 100 A (max) (VDS = 60 V)
2sk3278.pdf
Ordering number : ENN66802SK3278N-Channel Silicon MOSFET2SK3278DC/DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm 4V drive. 2083B Ultrahigh-speed switching.[2SK3278]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3 SANYO : TPunit : mm2092B[2SK3278]6.5 2.35.0 0.54
2sk3285.pdf
Ordering number:ENN6358N-Channel Silicon MOSFET2SK3285DC/DC Converter ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2093A[2SK3285]4.510.21.31.20.80.41 2 31 : Gate2 : Drain3 : Source2.55 2.55SANYO : SMPunit:mm2169[2SK3285]4.510.21.31 2 31.20.82.55 2.550.41 : Gate2 : Drain3 : Source2.55 2.55
2sk3284.pdf
Ordering number : ENA01682SK3284N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3284ApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-speed switching.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 400 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID 10 ADra
2sk3283.pdf
Ordering number : ENN66002SK3283N-Channel Silicon MOSFET2SK3283Load S/W ApplicationsPreliminaryFeatures Package Dimensions Low ON resistance. unit : mm 4V-drive. 2083B[2SK3283]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPunit : mm2092B[2SK3283]6.5 2.35.0 0.540.50.851 2 30.61
2sk3280.pdf
Ordering number:ENN6436N-Channel Silicon MOSFET2SK3280DC/DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm 4V drive.2083B Ultrahigh-speed switching.[2SK3280]6.52.35.00.540.850.71.20.6 0.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SK3280]6.5 2.35.0 0.540.50.851
2sk3292.pdf
Ordering number:ENN6414N-Channel Silicon MOSFET2SK3292Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SK3292]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CP
2sk3293.pdf
Ordering number:ENN6345N-Channel Silicon MOSFET2SK3293Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SK3293]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CP
2sk3291.pdf
Ordering number:ENN6413N-Channel Silicon MOSFET2SK3291Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SK3291]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CP
2sk3211.pdf
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1091-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS = 60 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(L)) (Package name: LDPAK(S)-
2sk3288entl.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3229.pdf
2SK3229 Silicon N Channel MOS FET High Speed Power Switching REJ03G1095-0200 (Previous: ADE-208-766) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS (on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A(Package name: TO-220CFM)D1. Gate2. DrainG3. SourceS1
rej03g1092 2sk3212ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3298b.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3288.pdf
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
rej03g1094 2sk3228ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3209.pdf
2SK3209 Silicon N Channel MOS FET High Speed Power Switching REJ03G1090-0300 (Previous: ADE-208-759A) Target Specification Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain
rej03g1091 2sk3211lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3225-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3210.pdf
2SK3210(L), 2SK3210(S)Silicon N Channel MOS FETHigh Speed Power SwitchingREJ03G0414-0300(Previous ADE-208-760A (Z))Rev.3.00Sep. 30, 2004Features Low on-resistanceRDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V sourceOutlineLDPAKD4 41. Gate2. DrainG3. Source4. Drain123123SAbsolute Maximum Rating
2sk3212.pdf
2SK3212 Silicon N Channel MOS FET High Speed Power Switching REJ03G1092-0300 (Previous: ADE-208-752A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =0.1 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3. Source1S23
2sk3290.pdf
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sk3289.pdf
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sk3228.pdf
2SK3228 Silicon N Channel MOS FET High Speed Power Switching REJ03G1094-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS (on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. Gate2. Drain (Flange)G3. Source123SRev.4.00 May 15
2sk3287.pdf
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sk3230.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3224-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3274.pdf
2SK3274 (L), 2SK3274 (S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1098-0300 Rev.3.00 May 15, 2006 Features Low on-resistance RDS (on) = 10 m typ. 4.5 V gate drive device High speed switching Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C(Package name: DPAK (L)-(2) ) (Package name: DPAK (S) )4D2
2sk3298.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0409ej 2sk3210ls.pdf
Preliminary Datasheet 2SK3210(L), 2SK3210(S) R07DS0409EJ0400(Previous: REJ03G0414-0300)Silicon N Channel MOS FET Rev.4.00High Speed Power Switching May 16, 2011Features Low on-resistance RDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B
rej03g1090 2sk3209ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1098 2sk3274lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3221.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3230.pdf
DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK3230BN-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3230B is suitable for converter of ECM. 0.3 0.05 0.1+0.10.05 General-purpose product. FEATURES 3 Low noise: -108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 k) 2 1 Especial
2sk3299-s-zj.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3299SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEORDERING INFORMATIONDESCRIPTION The 2SK3299 is N-Channel MOS FET device that featuresPART NUMBER PACKAGEa low gate charge and excellent switching characteristics,2SK3299 TO-220ABdesigned for high voltage applications such as switching power2SK3299-S TO-262supply, AC adapter.2S
2sk3277.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs2SK3277Silicon N-channel power MOSFETUnit: mm6.50.1 Features2.30.15.30.14.350.1 Avalanche energy capability guaranteed0.50.1 High-speed switching No secondary breakdown Applications1.00.1 Non-contact relay0.10.050.50.1 Solenoid drive 0.750.12.
2sk3268.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).Power MOS FETs2SK3268Silicon N-channel power MOS FET Features Package Avalanche energy capability guaranteed Code High-speed switchingU-DL Low ON resistance Ron Pin Name No secondary breakdown1: Gate Low-voltage drive2: Drain High electrostatic energy capability3: Source
2sk3272-01sj-01s-01l.pdf
2SK3272-01L,S,SJ200509N-CHANNEL SILICON POWER MOSFETTrench Power MOSFETOutline DrawingsFeaturesHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerAvalanche-proofSee to P4ApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C unless otherwise s
2sk3219-01mr.pdf
FUJI POWER MOS-FET2SK3219-01MRN-CHANNEL SILICON POWER MOS-FET FeaturesTO-220F15High speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators2.54 UPS (Uninterruptible Power Supply) DC-DC converters3. SourceMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25
2sk3271-01.pdf
N-channel MOS-FET2SK3271-01 6,5mTrench Gate MOSFET 60V 100A 155W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Avalanche Rated> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),
2sk3262-01mr.pdf
FUJI POWER MOS-FET2SK3262-01MRN-CHANNEL SILICON POWER MOS-FETTO-220F15 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators 2.54 UPS (Uninterruptible Power Supply)3. Source DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25
2sk3203.pdf
2SK3203(L), 2SK3203(S)Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-1384A (Z)2nd. EditionJan. 2001Features Low on-resistanceRDS(on) =11m typ. Low drive current 5V gate drive device can be driven from 5V sourceOutlineLDPAK4 4D1231G 231. Gate2. Drain3. Source4. DrainS2SK3203(L), 2SK3203(S)Absolute Maximum Ratings (Ta = 2
2sk322.pdf
2SK322Silicon N-Channel Junction FETApplicationHF wide band amplifierOutlineMPAK311. Drain2. Source23. Gate2SK322Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitGate to drain voltage VGDO 15 VGate to source voltage VGSO 15 VDrain current ID 50 mAGate current IG 5mAChannel power dissipation Pch 150 mWChannel temperature Tch 150 CSt
2sk3214.pdf
2SK3214Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-763(Z)Target Specification1st. EditionDecember 1998Features Low on-resistanceRDS =130m typ. High speed switching 4V gate drive device can be driven from 5V sourceOutlineTO220ABDG1. Gate12. Drain(Flange)23. Source3S2SK3214Absolute Maximum Ratings (Ta = 25 C)Item S
2sk3203l 2sk3203s.pdf
2SK3203(L), 2SK3203(S)Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-1384A (Z)2nd. EditionJan. 2001Features Low on-resistanceRDS(on) =11m typ. Low drive current 5V gate drive device can be driven from 5V sourceOutlineLDPAK4 4D1231G 231. Gate2. Drain3. Source4. DrainS2SK3203(L), 2SK3203(S)Absolute Maximum Ratings (Ta = 2
2sk3233.pdf
2SK3233Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-1369 (Z)1st. EditionMar. 2001Features Low on-resistance: RDS(on) = 1.1 typ. Low leakage current: IDSS = 1 A max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) Avalanche
2sk3269.pdf
SMD Type MOSFETN-Channel Enhacement Mode MOSFET2SK3269TO-263Unit: mm+0.2Features4.57-0.2+0.11.27-0.14.5 V drive availableLow on-state resistanceRDS(on)1 =12m MAX. (VGS =10V, ID =18 A)+0.10.1max1.27-0.1Low gate chargeQG = 30 nC TYP. (ID =35 A, VDD =16 V, VGS =10 V) +0.10.81-0.12.54Built-in gate protection diode1Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.
2sk3294.pdf
SMD Type MOSFETMOS Field Effect Transistor2SK3294TO-263Unit: mmFeatures +0.24.57-0.2+0.11.27-0.1Gate voltage rating 30 VLow on-state resistanceRDS(on) = 160 m MAX. (VGS =10V, ID =10A)+0.10.1max1.27-0.1Low input capacitanceCiss =1500pFTYP. (VDS =10 V, VGS =0 V)+0.10.81-0.12.54Avalanche capability rated1Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.2Bu
2sk3224-z.pdf
SMD Type MOSFETN-Channel MOSFET2SK3224-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features +0.25.30-0.2 +0.80.50 -0.7 VDS (V) = 60V ID = 20 A (VGS = 10V) RDS(ON) 40m (VGS = 10V)0.127+0.10.80-0.1max RDS(ON) 60m (VGS = 4V) Low Ciss : Ciss = 790 pF TYP.+ 0.12.3 0.60- 0.11 Gate+0.154 .60 -0.15Drain2 Drain3 So
2sk3295.pdf
SMD Type ICSMD Type TransistorsMOS Field Effect Transistor2SK3295TO-263Unit: mmFeatures+0.24.5 V drive available 4.57-0.21.27+0.1-0.1Low on-state resistanceRDS(on)1 =18 mMAX. (VGS =10V, ID =18A)Low gate chargeQG =16nCTYP. (ID =35A, VDD =16V, VGS =10V)0.1max1.27+0.1-0.1Built-in gate protection diode+0.1Surface mount device available 0.81-0.12.541Gate
2sk3225.pdf
SMD Type MOSFETN-Channel MOSFET2SK3225TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.15.30+0.2-0.2 +0.80.50 -0.7 Features VDS (V) = 60V 4 ID = 34 A (VGS = 10V) RDS(ON) 18m (VGS = 10V)0.1270.80+0.1 max-0.1 RDS(ON) 27m (VGS = 4V) Low input capacitanceCiss = 2100 pF TYP 1 Gate2 Drain2.3 0.60+ 0.1- 0.13 Source+0.154.6
2sk3269-zj.pdf
SMD Type MOSFETN-Channel MOSFET2SK3269-ZJ Features VDS (V) = 100V ID = 25 A (VGS = 10V) RDS(ON) 100m (VGS = 10V)D Low on-resistance, Low Qg High avalanche resistanceGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 100V Gate-Source Voltage VGS 20 Continuous Drain Current ID 25A Puls
2sk3290.pdf
2SK3290www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G
2sk3229.pdf
isc N-Channel MOSFET Transistor 2SK3229FEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3216.pdf
isc N-Channel MOSFET Transistor 2SK3216FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk3210s.pdf
isc N-Channel MOSFET Transistor 2SK3210SFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 45m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3221-az.pdf
isc N-Channel MOSFET Transistor 2SK3221-AZFEATURESDrain Current : I = 2A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 4.4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk3210l.pdf
isc N-Channel MOSFET Transistor 2SK3210LFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 45m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3285k.pdf
isc N-Channel MOSFET Transistor 2SK3285KFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3272s.pdf
isc N-Channel MOSFET Transistor 2SK3272SFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @VGS= 40VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3265.pdf
isc N-Channel MOSFET Transistor 2SK3265FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3224.pdf
isc N-Channel MOSFET Transistor 2SK3224FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri
2sk3273.pdf
isc N-Channel MOSFET Transistor 2SK3273FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk3209.pdf
isc N-Channel MOSFET Transistor 2SK3209FEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 45m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3273-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3273-01MRFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
2sk3225-z.pdf
isc N-Channel MOSFET Transistor 2SK3225-ZFEATURESDrain Current : I =34A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr
2sk3272-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3272-01SJFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @VGS= 40VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk3212.pdf
isc N-Channel MOSFET Transistor 2SK3212FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3214.pdf
isc N-Channel MOSFET Transistor 2SK3214FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 170m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3272-01s.pdf
isc N-Channel MOSFET Transistor 2SK3272-01SFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @VGS= 40VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3211s.pdf
isc N-Channel MOSFET Transistor 2SK3211SFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3270-01.pdf
isc N-Channel MOSFET Transistor 2SK3270-01FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk3205.pdf
isc N-Channel MOSFET Transistor 2SK3205FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 0.5(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri
2sk3224-z.pdf
isc N-Channel MOSFET Transistor 2SK3224-ZFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3215.pdf
isc N-Channel MOSFET Transistor 2SK3215FEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk3271-01.pdf
isc N-Channel MOSFET Transistor 2SK3271-01FEATURESWith TO-247 packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-
2sk3285b.pdf
isc N-Channel MOSFET Transistor 2SK3285BFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3218.pdf
isc N-Channel MOSFET Transistor 2SK3218FEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 43m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk3272l.pdf
isc N-Channel MOSFET Transistor 2SK3272LFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @VGS= 40VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3225.pdf
isc N-Channel MOSFET Transistor 2SK3225FEATURESDrain Current : I =34A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid driv
2sk3211l.pdf
isc N-Channel MOSFET Transistor 2SK3211LFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3271.pdf
isc N-Channel MOSFET Transistor 2SK3271FEATURESWith TO-3P packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour
2sk324.pdf
isc N-Channel MOSFET Transistor 2SK324FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3262.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK3262FEATURESWith TO-220F packagingHigh speed switchingNo secondary breadownEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
2sk3234.pdf
isc N-Channel MOSFET Transistor 2SK3234FEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3236.pdf
isc N-Channel MOSFET Transistor 2SK3236FEATURESDrain Current : I = 35A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr
2sk3278i.pdf
isc N-Channel MOSFET Transistor 2SK3278IFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 36m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3219.pdf
isc N-Channel MOSFET Transistor 2SK3219FEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 43m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3278d.pdf
isc N-Channel MOSFET Transistor 2SK3278DFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 36m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3221.pdf
isc N-Channel MOSFET Transistor 2SK3221FEATURESDrain Current : I = 2A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 4.4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3217.pdf
isc N-Channel MOSFET Transistor 2SK3217FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3233.pdf
isc N-Channel MOSFET Transistor 2SK3233FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr
2sk3268.pdf
isc N-Channel MOSFET Transistor 2SK3268FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.1(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3272-01l.pdf
isc N-Channel MOSFET Transistor 22SK3272-01LFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @VGS= 40VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk3235.pdf
isc N-Channel MOSFET Transistor 2SK3235FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 18N60
Keywords - 2SK3255 MOSFET datasheet
2SK3255 cross reference
2SK3255 equivalent finder
2SK3255 lookup
2SK3255 substitution
2SK3255 replacement
History: 18N60
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