All MOSFET. HUF76107D3S Datasheet

 

HUF76107D3S Datasheet and Replacement


   Type Designator: HUF76107D3S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: TO252AA
 

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HUF76107D3S Datasheet (PDF)

 4.1. Size:112K  intersil
 huf76107d3-s.pdf pdf_icon

HUF76107D3S

HUF76107D3, HUF76107D3SData Sheet July 1999 File Number 4701.120A, 30V, 0.052 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power 20A, 30VMOSFETs are manufactured using Ultra Low On-Resistance, rDS(ON) = 0.052the innovative UltraFET process.This advanced process technology Temperature Compensating PSPICE

 6.1. Size:367K  intersil
 huf76107p3.pdf pdf_icon

HUF76107D3S

HUF76107P3Data Sheet October 1999 File Number 4382.520A, 30V, 0.052 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power 20A, 30VMOSFETs are manufactured using Ultra Low On-Resistance, rDS(ON) = 0.052the innovative UltraFET process.This advanced process technology Temperature Compensating PSPICE Modela

 7.1. Size:134K  intersil
 huf76105sk8.pdf pdf_icon

HUF76107D3S

HUF76105SK8Data Sheet May 1999 File Number 4719.15.5A, 30V, 0.050 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 5.5A, 30Vmanufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.050UltraFET process. This advancedprocess technology achieves the Simulation Modelslowest possible

 7.2. Size:174K  intersil
 huf76105dk8.pdf pdf_icon

HUF76107D3S

HUF76105DK8TMData Sheet June 2000 File Number 4380.65A, 30V, 0.050 Ohm, Dual N-Channel, FeaturesLogic Level UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 5A, 30Vmanufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.050UltraFET process. This advancedprocess technology achieves the Temperature Compensating

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Datasheet: HUF75639P3 , HUF75639S3S , HUF75645P3 , HUF75645S3S , HUF75652G3 , HUF76105DK8 , HUF76105SK8 , HUF76107D3 , 5N50 , HUF76107P3 , HUF76113DK8 , HUF76113SK8 , HUF76113T3ST , HUF76121D3 , HUF76121D3S , HUF76121P3 , HUF76121S3S .

Keywords - HUF76107D3S MOSFET datasheet

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