SPP100N08S2-07 MOSFET. Datasheet pdf. Equivalent
Type Designator: SPP100N08S2-07
Marking Code: PN0807
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 75 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 36 nS
Drain-Source Capacitance (Cd): 1080 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0071 Ohm
Package: TO220
SPP100N08S2-07 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPP100N08S2-07 Datasheet (PDF)
0.1. spp100n08s2-07 spb100n08s2-07.pdf 
Size:309K _infineon
SPP100N08S2-07SPB100N08S2-07OptiMOS Power-TransistorProduct SummaryFeatureVDS75 V N-ChannelRDS(on) max. SMD version 6.8 m Enhancement modeID 100 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N08S2-07 P- TO220 -3-1 Q67060-S6044PN0807SPB100N08S2-07 P- TO263 -3-2
6.1. spp100n06s2-05 spb100n06s2-05.pdf Size:312K _1
SPP100N06S2-05SPB100N06S2-05OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) max. SMD version 4.7 m Enhancement modeID 100 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N06S2-05 P- TO220 -3-1 Q67060-S6048PN0605SPB100N06S2-05 P- TO263 -3-2
6.2. spp100n06s2l-05 spb100n06s2l-05.pdf Size:310K _infineon
SPP100N06S2L-05SPB100N06S2L-05OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) max. SMD version 4.4 m Enhancement modeID 100 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N06S2L-05 P- TO220 -3-1 Q67060-S6043PN06L05SPB100N0
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