All MOSFET. SPB100N08S2-07 Datasheet

 

SPB100N08S2-07 MOSFET. Datasheet pdf. Equivalent

Type Designator: SPB100N08S2-07

Marking Code: PN0807

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 36 nS

Drain-Source Capacitance (Cd): 1080 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0071 Ohm

Package: TO263

SPB100N08S2-07 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPB100N08S2-07 Datasheet (PDF)

0.1. spp100n08s2-07 spb100n08s2-07.pdf Size:309K _infineon

SPB100N08S2-07
SPB100N08S2-07

SPP100N08S2-07SPB100N08S2-07OptiMOS Power-TransistorProduct SummaryFeatureVDS75 V N-ChannelRDS(on) max. SMD version 6.8 m Enhancement modeID 100 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N08S2-07 P- TO220 -3-1 Q67060-S6044PN0807SPB100N08S2-07 P- TO263 -3-2

6.1. spp100n06s2-05 spb100n06s2-05.pdf Size:312K _1

SPB100N08S2-07
SPB100N08S2-07

SPP100N06S2-05SPB100N06S2-05OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) max. SMD version 4.7 m Enhancement modeID 100 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N06S2-05 P- TO220 -3-1 Q67060-S6048PN0605SPB100N06S2-05 P- TO263 -3-2

6.2. spp100n06s2l-05 spb100n06s2l-05.pdf Size:310K _infineon

SPB100N08S2-07
SPB100N08S2-07

SPP100N06S2L-05SPB100N06S2L-05OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) max. SMD version 4.4 m Enhancement modeID 100 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N06S2L-05 P- TO220 -3-1 Q67060-S6043PN06L05SPB100N0

 6.3. spb100n03s2-03 spb100n03s2.pdf Size:676K _infineon

SPB100N08S2-07
SPB100N08S2-07

SPB100N03S2-03GOptiMOS TM Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) max. SMD version 3 m Enhancement modeID 100 A Excellent Gate Charge x RDS(on) product (FOM)P-TO263 -3 Superior thermal resistance 175C operating temperature Avalanche rated dv/d t rated; Halogen Free according to IEC61249-2-21 MarkingType Package

Datasheet: FDMS5361L_F085 , FCD850N80Z , 2SK3503 , 2SK3255 , 2SJ648 , 2SK1937-01 , 2SK537 , SPP100N08S2-07 , 2N3824 , SST270 , SST271 , SPD35N10 , SPI70N10L , SPP70N10L , SPB70N10L , SI2309DS , MT3205 .

 

 
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