All MOSFET. SPB100N08S2-07 Datasheet

 

SPB100N08S2-07 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPB100N08S2-07
   Marking Code: PN0807
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 5.5 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 1080 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm
   Package: TO263

 SPB100N08S2-07 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPB100N08S2-07 Datasheet (PDF)

 ..1. Size:309K  infineon
 spp100n08s2-07 spb100n08s2-07.pdf

SPB100N08S2-07 SPB100N08S2-07

SPP100N08S2-07SPB100N08S2-07OptiMOS Power-TransistorProduct SummaryFeatureVDS75 V N-ChannelRDS(on) max. SMD version 6.8 m Enhancement modeID 100 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N08S2-07 P- TO220 -3-1 Q67060-S6044PN0807SPB100N08S2-07 P- TO263 -3-2

 3.1. Size:200K  1
 spp100n08s2l-07 spb100n08s2l-07.pdf

SPB100N08S2-07 SPB100N08S2-07

SPP100N08S2L-07SPB100N08S2L-07OptiMOS Power-TransistorProduct SummaryFeatureVDS75 V N-ChannelRDS(on) max. SMD version 6.5 m Enhancement modeID 100 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N08S2L-07 P- TO220 -3-1 Q67060-S6045PN08L07SPB100N0

 6.1. Size:312K  1
 spp100n06s2-05 spb100n06s2-05.pdf

SPB100N08S2-07 SPB100N08S2-07

SPP100N06S2-05SPB100N06S2-05OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) max. SMD version 4.7 m Enhancement modeID 100 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N06S2-05 P- TO220 -3-1 Q67060-S6048PN0605SPB100N06S2-05 P- TO263 -3-2

 6.2. Size:310K  infineon
 spp100n06s2l-05 spb100n06s2l-05.pdf

SPB100N08S2-07 SPB100N08S2-07

SPP100N06S2L-05SPB100N06S2L-05OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) max. SMD version 4.4 m Enhancement modeID 100 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N06S2L-05 P- TO220 -3-1 Q67060-S6043PN06L05SPB100N0

 6.3. Size:676K  infineon
 spb100n03s2-03 spb100n03s2.pdf

SPB100N08S2-07 SPB100N08S2-07

SPB100N03S2-03GOptiMOS TM Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) max. SMD version 3 m Enhancement modeID 100 A Excellent Gate Charge x RDS(on) product (FOM)P-TO263 -3 Superior thermal resistance 175C operating temperature Avalanche rated dv/d t rated; Halogen Free according to IEC61249-2-21 MarkingType Package

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SPU07N60C3

 

 
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